Online Junction Temperature Monitoring of Wide Bandgap Power Transistors using Quasi Turn-on Delay as TSEP

Mapping Intimacies ◽

10.1109/wipda49284.2021.9645132 ◽

2021 ◽

Author(s):

Kanuj Sharma ◽

Kevin Munoz Baron ◽

Johannes Ruthardt ◽

Ingmar Kallfass

Keyword(s):

Wide Bandgap ◽

Temperature Monitoring ◽

Junction Temperature ◽

Power Transistors ◽

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Online Junction Temperature Monitoring for SiC MOSFETs Using Turn-On Delay Time

2020 IEEE Applied Power Electronics Conference and Exposition (APEC) ◽

10.1109/apec39645.2020.9124345 ◽

2020 ◽

Author(s):

Liang Qiao ◽

Fred Wang ◽

Jacob Dyer ◽

Zheyu Zhang

Keyword(s):

Temperature Monitoring ◽

Junction Temperature ◽

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Influence of Gate Loop Inductance on TSEP-based Junction Temperature Monitoring for SiC MOSFET

2020 IEEE 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia) ◽

10.1109/ipemc-ecceasia48364.2020.9367681 ◽

2020 ◽

Author(s):

Zhong Zeng ◽

Zongjian Li ◽

Feng Li ◽

Xi Jiang ◽

Jun Wang

Keyword(s):

Temperature Monitoring ◽

Junction Temperature

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An Online Junction Temperature Monitoring Method for SiC MOSFETs Based on a Novel Gate Conduction Model

IEEE Transactions on Power Electronics ◽

10.1109/tpel.2021.3072436 ◽

2021 ◽

pp. 1-1

Author(s):

Qinghao Zhang ◽

Pinjia Zhang

Keyword(s):

Temperature Monitoring ◽

Junction Temperature ◽

Conduction Model ◽

Monitoring Method

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Online junction temperature measurement via internal gate resistance during turn-on

2014 16th European Conference on Power Electronics and Applications ◽

10.1109/epe.2014.6911024 ◽

2014 ◽

Author(s):

Nick Baker ◽

Stig Munk-Nielsen ◽

Marco Liserre ◽

Francesco Iannuzzo

Keyword(s):

Temperature Measurement ◽

Junction Temperature ◽

Turn On ◽

Gate Resistance

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Lateral Power Transistors on Wide Bandgap Semiconductors

Power Systems - Lateral Power Transistors in Integrated Circuits ◽

10.1007/978-3-319-00500-3_9 ◽

2014 ◽

pp. 177-208

Author(s):

Tobias Erlbacher

Keyword(s):

Wide Bandgap ◽

Wide Bandgap Semiconductors ◽

Power Transistors ◽

Bandgap Semiconductors

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Online Junction Temperature Monitoring Using Intelligent Gate Drive for SiC Power Devices

IEEE Transactions on Power Electronics ◽

10.1109/tpel.2018.2879511 ◽

2019 ◽

Vol 34 (8) ◽

pp. 7922-7932 ◽

Author(s):

Zheyu Zhang ◽

Jacob Dyer ◽

Xuanlyu Wu ◽

Fei Wang ◽

Daniel Costinett ◽

...

Keyword(s):

Temperature Monitoring ◽

Junction Temperature ◽

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In Situ Junction Temperature Monitoring and Bond Wire Detecting Method Based on IGBT and FWD On-State Voltage Drops

IEEE Transactions on Industry Applications ◽

10.1109/tia.2021.3130215 ◽

2021 ◽

pp. 1-1

Author(s):

Yanyong Yang ◽

Pinjia Zhang

Keyword(s):

Temperature Monitoring ◽

Junction Temperature ◽

Voltage Drops ◽

Bond Wire ◽

Detecting Method

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Determination of Hard- and Soft-Switching Losses for Wide Bandgap Power Transistors with Noninvasive and Fast Calorimetric Measurements

2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.23919/ispsd50666.2021.9452230 ◽

2021 ◽

Author(s):

Julian Weimer ◽

Dominik Koch ◽

Ruben Schnitzler ◽

Ingmar Kallfass

Keyword(s):

Wide Bandgap ◽

Soft Switching ◽

Power Transistors ◽

Switching Losses ◽

Calorimetric Measurements

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Influence of Gate Loop Inductance on TSEP-based Junction Temperature Monitoring for IGBT

IEEE Journal of Emerging and Selected Topics in Power Electronics ◽

10.1109/jestpe.2020.3001361 ◽

2020 ◽

pp. 1-1

Author(s):

Zhong Zeng ◽

Zongjian Li ◽

Jun Wang ◽

Xi Jiang ◽

Feng Li ◽

...

Keyword(s):

Temperature Monitoring ◽

Junction Temperature

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A Novel Real-Time Junction Temperature Monitoring Circuit for SiC MOSFET

2020 IEEE Applied Power Electronics Conference and Exposition (APEC) ◽

10.1109/apec39645.2020.9124486 ◽

2020 ◽

Author(s):

Hengyu Yu ◽

Xi Jiang ◽

Jianjun Chen ◽

Jun Wang ◽

Z. John Shen

Keyword(s):

Real Time ◽

Temperature Monitoring ◽

Junction Temperature

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