Influence of Gate Loop Inductance on TSEP-based Junction Temperature Monitoring for IGBT

IEEE Journal of Emerging and Selected Topics in Power Electronics ◽

10.1109/jestpe.2020.3001361 ◽

2020 ◽

pp. 1-1

Author(s):

Zhong Zeng ◽

Zongjian Li ◽

Jun Wang ◽

Xi Jiang ◽

Feng Li ◽

...

Keyword(s):

Temperature Monitoring ◽

Junction Temperature

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Influence of Gate Loop Inductance on TSEP-based Junction Temperature Monitoring for SiC MOSFET

2020 IEEE 9th International Power Electronics and Motion Control Conference (IPEMC2020-ECCE Asia) ◽

10.1109/ipemc-ecceasia48364.2020.9367681 ◽

2020 ◽

Author(s):

Zhong Zeng ◽

Zongjian Li ◽

Feng Li ◽

Xi Jiang ◽

Jun Wang

Keyword(s):

Temperature Monitoring ◽

Junction Temperature

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An Online Junction Temperature Monitoring Method for SiC MOSFETs Based on a Novel Gate Conduction Model

IEEE Transactions on Power Electronics ◽

10.1109/tpel.2021.3072436 ◽

2021 ◽

pp. 1-1

Author(s):

Qinghao Zhang ◽

Pinjia Zhang

Keyword(s):

Temperature Monitoring ◽

Junction Temperature ◽

Conduction Model ◽

Monitoring Method

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Online Junction Temperature Monitoring Using Intelligent Gate Drive for SiC Power Devices

IEEE Transactions on Power Electronics ◽

10.1109/tpel.2018.2879511 ◽

2019 ◽

Vol 34 (8) ◽

pp. 7922-7932 ◽

Author(s):

Zheyu Zhang ◽

Jacob Dyer ◽

Xuanlyu Wu ◽

Fei Wang ◽

Daniel Costinett ◽

...

Keyword(s):

Temperature Monitoring ◽

Junction Temperature ◽

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In Situ Junction Temperature Monitoring and Bond Wire Detecting Method Based on IGBT and FWD On-State Voltage Drops

IEEE Transactions on Industry Applications ◽

10.1109/tia.2021.3130215 ◽

2021 ◽

pp. 1-1

Author(s):

Yanyong Yang ◽

Pinjia Zhang

Keyword(s):

Temperature Monitoring ◽

Junction Temperature ◽

Voltage Drops ◽

Bond Wire ◽

Detecting Method

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Online Junction Temperature Monitoring of Wide Bandgap Power Transistors using Quasi Turn-on Delay as TSEP

10.1109/wipda49284.2021.9645132 ◽

2021 ◽

Author(s):

Kanuj Sharma ◽

Kevin Munoz Baron ◽

Johannes Ruthardt ◽

Ingmar Kallfass

Keyword(s):

Wide Bandgap ◽

Temperature Monitoring ◽

Junction Temperature ◽

Power Transistors ◽

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A Novel Real-Time Junction Temperature Monitoring Circuit for SiC MOSFET

2020 IEEE Applied Power Electronics Conference and Exposition (APEC) ◽

10.1109/apec39645.2020.9124486 ◽

2020 ◽

Author(s):

Hengyu Yu ◽

Xi Jiang ◽

Jianjun Chen ◽

Jun Wang ◽

Z. John Shen

Keyword(s):

Real Time ◽

Temperature Monitoring ◽

Junction Temperature

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Power cycling test of power semiconductor based on junction temperature monitoring

20th International Workshop on Thermal Investigations of ICs and Systems ◽

10.1109/therminic.2014.6972505 ◽

2014 ◽

Author(s):

Sung Soon Choi ◽

WooYoung Lee ◽

Byungjin Ma ◽

Kwan-Hun Lee

Keyword(s):

Temperature Monitoring ◽

Junction Temperature ◽

Power Semiconductor ◽

Cycling Test ◽

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Online Junction Temperature Monitoring of Power Semiconductor Devices Based on a Wheatstone Bridge

10.1109/ecce47101.2021.9595774 ◽

2021 ◽

Author(s):

Niklas Fritz ◽

Maximilian Friedel ◽

Rik W. De Doncker ◽

Timothy A. Polom

Keyword(s):

Semiconductor Devices ◽

Wheatstone Bridge ◽

Temperature Monitoring ◽

Junction Temperature ◽

Power Semiconductor ◽

Power Semiconductor Devices

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Advanced Gate Drive Unit for junction temperature monitoring and dynamic current balancing of GaN transistors operating in parallel

2020 IEEE Applied Power Electronics Conference and Exposition (APEC) ◽

10.1109/apec39645.2020.9124529 ◽

2020 ◽

Author(s):

Ashot Melkonyan ◽

Martin Schulz

Keyword(s):

Temperature Monitoring ◽

Junction Temperature ◽

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Electrothermal Management Using In-situ Junction Temperature Monitoring for Enhanced Reliability of SiC-Based Power Electronics

10.1109/ests49166.2021.9512370 ◽

2021 ◽

Author(s):

Dehao Qin ◽

Gokhan Ozkan ◽

Christopher Edrington ◽

Zheyu Zhang

Keyword(s):

Power Electronics ◽

Temperature Monitoring ◽

Junction Temperature

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