DIRECT RECORDING OF THE INITIALLY EXCITED AND THE SOLVENT RELAXED FLUORESCENCE EMISSION SPECTRA OF TRYPTOPHAN BY PHASE SENSITIVE DETECTION OF FLUORESCENCE

1982 ◽  
Vol 36 (2) ◽  
pp. 125-132 ◽  
Author(s):  
Joseph R. Lakowicz ◽  
Aleksander Balter
Keyword(s):  
Fluorescence Emission ◽  
Emission Spectra ◽  
Sensitive Detection ◽  
Fluorescence Emission Spectra ◽  
Direct Recording ◽  
Phase Sensitive ◽  
Phase Sensitive Detection

Optical Properties and Zinc Nitride Thin Films Prepared Using Magnetron Reactive Sputtering

2014 ◽  
Vol 940 ◽  
pp. 11-15
Author(s):  
Jun Qin Feng ◽  
Jun Fang Chen
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Near Infrared ◽  
Fluorescence Emission ◽  
Emission Spectra ◽  
Sem Images ◽  
Fluorescence Emission Spectra ◽  
Glass Substrates ◽  
Zinc Nitride ◽  
Direct Band

Zinc nitride films were deposited by ion sources-assisted magnetron sputtering with the use of Zn target (99.99% purity) on 7059 glass substrates. The films were characterized by XRD, SEM and EDS, the results of which show that the polycrystalline zinc nitride thin film can be grown on the glass substrates, the EDS spectrum confirmed the chemical composition of the films and the SEM images revealed that the zinc nitride thin films have a dense structure. Ultraviolet-visible-near infrared spectrophotometer was used to study the transmittance behaviors of zinc nitride thin films, which calculated the optical band gap by Davis Mott model. The results of the fluorescence emission spectra show the zinc nitride would be a direct band gap semiconductor material.

Stress and Phase Transformation Phenomena in Oxide Films: Real-Time Spectroscopic Measurements

1992 ◽  
Vol 271 ◽  
Author(s):  
Gregory J. Exarhos ◽  
Nancy J. Hess
Keyword(s):  
Phase Transformation ◽  
Applied Pressure ◽  
Oxide Films ◽  
Fluorescence Emission ◽  
Emission Spectra ◽  
Film Deposition ◽  
Optical Methods ◽  
Fluorescence Emission Spectra ◽  
Line Intensities ◽  
Deposition Parameters

ABSTRACTIn situ optical methods are reviewed for characterization of phase transformation processes and evaluation of residual stress in solution-deposited metastable oxide films. Such low density films most often are deposited as disordered phases making them prone to crystallization and attendant densification when subjected to increased temperature and/or applied pressure. Inherent stress imparted during film deposition and its evolution during the transformation are evaluated from phonon frequency shifts seen in Raman spectra (TiO2) or from changes in the laser-induced fluorescence emission spectra for films containing rare earth (Sm+3:Y3Al5O12) or transition metal (Cr+3 :Al2O3) dopants. The data in combination with measured increases in line intensities intrinsic to the evolving phase are used to follow crystallization processes in thin films. In general, film deposition parameters are found to influence the crystallite ingrowth kinetics and the magnitude of stress and stress relaxation in the film during the transformation. The utility of these methods to probe crystallization phenomena in oxide films will be addressed.

scholarly journals Fluorescence emission spectra of silver and silver/cobalt nanoparticles

2012 ◽  
Vol 19 (3) ◽  
pp. 943-947 ◽  
Author(s):  
Z. Parang ◽  
A. Keshavarz ◽  
S. Farahi ◽  
S.M. Elahi ◽  
M. Ghoranneviss ◽  
...  
Keyword(s):  
Fluorescence Emission ◽  
Emission Spectra ◽  
Cobalt Nanoparticles ◽  
Fluorescence Emission Spectra
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