Solid Solutions of Lead Metaniobate-Stabilization of the Ferroelectric Polymorph and the Effect on the Lattice Parameters, Dielectric, Ferroelectric, and Piezoelectric Properties

2013 ◽  
Vol 97 (1) ◽  
pp. 220-227 ◽  
Author(s):  
Mtabazi G. Sahini ◽  
Tor Grande ◽  
Barbara Fraygola ◽  
Alberto Biancoli ◽  
Dragan Damjanovic ◽  
...  
2015 ◽  
Vol 56 (9) ◽  
pp. 1370-1373 ◽  
Author(s):  
Dang Anh Tuan ◽  
Nguyen Trong Tinh ◽  
Vo Thanh Tung ◽  
Truong Van Chuong

2018 ◽  
Vol 44 (1) ◽  
pp. 556-562 ◽  
Author(s):  
Mateen Ullah ◽  
Hidayat Ullah Khan ◽  
Amir Ullah ◽  
Aman Ullah ◽  
III Won Kim ◽  
...  

2013 ◽  
Vol 52 (40) ◽  
pp. 14328-14334 ◽  
Author(s):  
Juan Ramos-Cano ◽  
Mario Miki-Yoshida ◽  
André Marino Gonçalves ◽  
José Antônio Eiras ◽  
Jesús González-Hernández ◽  
...  

2011 ◽  
Vol 328-330 ◽  
pp. 1131-1134
Author(s):  
Qian Chen ◽  
Zhi Jun Xu ◽  
Rui Qing Chu ◽  
Yong Liu ◽  
Ming Li Chen ◽  
...  

Lead-free piezoelectric ceramics Sr2Bi4-xGdxTi5O18 were prepared by conventional solid-state reaction method. Pure bismuth layered structural ceramics with uniform gain size were obtained in all samples. The effect of Gd-doping on the dielectric, ferroelectric and piezoelectric properties of Sr2Bi4Ti5O18 ceramics were also investigated. It was found that that Gd3+ dopant gradually decreased the Curie temperature (Tc) with the lower dielectric loss (tand) of SBTi ceramics. In addition, Gd-doping with appropriate content improved the ferroelectric and piezoelectric properties of the SBTi ceramics. The piezoelectric constant (d33) of the Sr2Bi3.9Gd0.1Ti5O18 ceramic reached the maximum value, which is 22 pC/N. The results showed that the Sr2Bi4-xGdxTi5O18 ceramic was a promising lead-free piezoelectric material.


Materials ◽  
2018 ◽  
Vol 11 (9) ◽  
pp. 1621 ◽  
Author(s):  
Tao Zhang ◽  
Jun Ou-Yang ◽  
Xiaofei Yang ◽  
Benpeng Zhu

Approximately 25 μm Pb(Mg1/3Nb2/3)O3–PbTiO3 (PMN-PT) thick film was synthesized based on a sol-gel/composite route. The obtained PMN-PT thick film was successfully transferred from the Silicon substrate to the conductive silver epoxy using a novel wet chemical method. The mechanism of this damage free transfer was explored and analyzed. Compared with the film on Silicon substrate, the transferred one exhibited superior dielectric, ferroelectric and piezoelectric properties. These promising results indicate that transferred PMN-PT thick film possesses the capability for piezoelectric device application, especially for ultrasound transducer fabrication. Most importantly, this chemical route opens a new path for transfer of thick film.


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