High-operating temperature InAsSb/AlSb heterostructure infrared detectors grown on GaAs substrates by molecular beam epitaxy
2015 ◽
Vol 44
(9)
◽
pp. 3002-3006
◽
2000 ◽
Vol 360
(1-2)
◽
pp. 195-204
◽
Keyword(s):
2005 ◽
Vol 44
(No. 17)
◽
pp. L508-L510
◽
Keyword(s):