Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates
Keyword(s):
AbstractThe Hall effect and photoluminescence measurements combined with annealing and/or ion milling were used to study the electrical and optical properties of HgCdTe films grown by molecular-beam epitaxy on GaAs substrates with ZnTe and CdTe buffer layers. Unintentional donor doping, likely from the substrate, which resulted in residual donor concentration of the order of 1015 cm−3, was observed in the films. Also, acceptor states, possibly related to structural defects, were observed.
2010 ◽
Vol 503
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pp. 155-158
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2001 ◽
Vol 81
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pp. 62-66
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2009 ◽
Vol 255
(9)
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pp. 4913-4915
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2000 ◽
Vol 221
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pp. 435-439
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