Research on the tunneling of asymmetric double quantum wells with time-resolved photoluminescence

1993 ◽  
Author(s):  
Xu G. Huang ◽  
Zhigang Cai ◽  
X. J. Zhang ◽  
Jianying Zhou ◽  
Zhenxin Yu
1993 ◽  
Vol 03 (C5) ◽  
pp. 405-408 ◽  
Author(s):  
I. LAWRENCE ◽  
W. W. RÜHLE ◽  
G. FEUILLET ◽  
H. TUFFIGO ◽  
H. MARIETTE ◽  
...  

2003 ◽  
Vol 798 ◽  
Author(s):  
Z. Y. Xu ◽  
X. D. Luo ◽  
X. D. Yang ◽  
P. H. Tan ◽  
C. L. Yang ◽  
...  

ABSTRACTTaking advantages of short pulse excitation and time-resolved photoluminescence (PL), we have studied the exciton localization effect in a number of GaAsN alloys and GaAsN/GaAs quantum wells (QWs). In the PL spectra, an extra transition located at the higher energy side of the commonly reported N-related emissions is observed. By measuring PL dependence on temperature and excitation power along with PL dynamics study, the new PL peak has been identified as a transition of the band edge-related recombination in dilute GaAsN alloy and delocalized transition in QWs. Using selective excitation PL we further attribute the localized emission in QWs to the excitons localized at the GaAsN/GaAs interfaces. This interface-related exciton localization could be greatly reduced by a rapid thermal annealing.


2002 ◽  
Vol 27 (1) ◽  
pp. 89-102 ◽  
Author(s):  
L. Silvestri ◽  
F. Bassani ◽  
G. Czajkowski ◽  
B. Davoudi

1998 ◽  
Vol 2 (1-4) ◽  
pp. 116-120 ◽  
Author(s):  
Yu.B. Vasilyev ◽  
K.V. Klitzing ◽  
K. Eberl

1990 ◽  
Vol 56 (4) ◽  
pp. 355-357 ◽  
Author(s):  
M. Nido ◽  
M. G. W. Alexander ◽  
W. W. Rühle ◽  
T. Schweizer ◽  
K. Köhler

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