Nonlinear photoresponse of quantum well infrared photodetectors at high-excitation power

Author(s):  
Maxim Ershov ◽  
Hui C. Liu ◽  
Margaret Buchanan ◽  
Zbigniew R. Wasilewski
1997 ◽  
Vol 70 (4) ◽  
pp. 414-416 ◽  
Author(s):  
M. Ershov ◽  
H. C. Liu ◽  
M. Buchanan ◽  
Z. R. Wasilewski ◽  
V. Ryzhii

1999 ◽  
Author(s):  
K. K. Choi ◽  
C. J. Chen ◽  
L. P. Rohkinson ◽  
N. C. Das ◽  
M. Jhabvala

1997 ◽  
Vol 499 ◽  
Author(s):  
S. H. Kwok ◽  
P. Y. Yu ◽  
K. Uchida ◽  
T. Arai

ABSTRACTWe report on a high pressure study of emission from a series of GaInP(ordered)/GaAs heterostructures. A so-called “deep emission” band at 1.46 eV is observed in all our samples. At high excitation power, quantum well emission emerges in only one structure where thin GaP layers are inserted on both sides of the GaAs well. From the pressure dependent emission in this sample we have determined its band alignments. The role of the GaP layers in suppressing the deep emission is elucidated.


2009 ◽  
Vol 95 (9) ◽  
pp. 093502 ◽  
Author(s):  
T. Yamanaka ◽  
B. Movaghar ◽  
S. Tsao ◽  
S. Kuboya ◽  
A. Myzaferi ◽  
...  

1999 ◽  
Author(s):  
Prafulla J. Masalkar ◽  
Hironori Nishino ◽  
Kousaku Yamamoto ◽  
Yoshihiro Miyamoto ◽  
Toshio Fujii

1997 ◽  
Author(s):  
Sumith V. Bandara ◽  
Sarath D. Gunapala ◽  
John K. Liu ◽  
Winn Hong ◽  
Jin S. Park

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