Novel large-area MIS-type x-ray image sensor for digital radiography

1998 ◽  
Author(s):  
Toshio Kameshima ◽  
Noriyuki Kaifu ◽  
Eiichi Takami ◽  
Masakazu Morishita ◽  
Tatsuya Yamazaki
Keyword(s):  
Digital Radiography ◽  
Image Sensor ◽  
Large Area ◽  
X Ray

Low noise, large area CMOS x-ray image sensor for C.T. application

2004 ◽  
Author(s):  
A. Kemna ◽  
W. Brockherde ◽  
B. Hosticka ◽  
E. Ozkan ◽  
F. Morales-Serrano ◽  
...  
Keyword(s):  
Image Sensor ◽  
Low Noise ◽  
Large Area ◽  
X Ray

New large-area x-ray image sensor

1998 ◽  
Author(s):  
Donald R. Ouimette ◽  
Sol Nudelman ◽  
Richard S. Aikens
Keyword(s):  
Image Sensor ◽  
Large Area ◽  
X Ray ◽  
Area X

Large-area MEMS fabrication with thick SU-8 photoresist applied to an x-ray image sensor array

2000 ◽  
Author(s):  
Jurgen H. Daniel ◽  
Brent S. Krusor ◽  
Raj B. Apte ◽  
Robert A. Street ◽  
Adela Goredema ◽  
...  
Keyword(s):  
Sensor Array ◽  
Image Sensor ◽  
Large Area ◽  
X Ray ◽  
Mems Fabrication ◽  
Image Sensor Array

Preliminary Results on Large Area X-ray a-SiC:H Multilayer Detectors with Optically Addressed Readout

2007 ◽  
Vol 989 ◽  
Author(s):  
Manuela Vieira ◽  
Yuri Vygranenko ◽  
Miguel Fernandes ◽  
Paula Louro ◽  
Pedro Sanguino ◽  
...  
Keyword(s):  
Numerical Simulation ◽  
Charge Carrier ◽  
Carrier Transport ◽  
Image Sensor ◽  
Semiconductor Layer ◽  
Charge Carrier Transport ◽  
Large Area ◽  
X Ray ◽  
Switching Mode ◽  
Area X

AbstractThis paper investigates a feasibility of using a large area image sensor with an optically addressed readout for medical X-ray diagnostic imaging. A device prototype comprises a multilayer glass/ZnO:Al/p (a-SiC:H)/i (a-Si:H)/ n (a-SiC:H)/ i(a-Si:H)/p (a-SiC:H)/ a SiNx/ITO structure coupled to a scintillator layer. Here, the p-i-n-i-p structure works in both sensing and switching modes depending on the biasing conditions. A numerical simulation is used to optimize the semiconductor layer thicknesses in order to achieve a photocurrent matching between back-to-back diodes in switching mode. The charge carrier transport within the p-i-n-i-p structure is also analyzed under different electric and optical biasing conditions. A physical model supports the results.

Digital Radiography with a Large-Area, Amorphous-Silicon, Flat-Panel X-Ray Detector System

2000 ◽  
Vol 35 (4) ◽  
pp. 260-266 ◽  
Author(s):  
MARTIN SPAHN ◽  
MICHAEL STROTZER ◽  
MARKUS VÖLK ◽  
STEFAN BÖHM ◽  
BERNHARD GEIGER ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Digital Radiography ◽  
Detector System ◽  
Large Area ◽  
Flat Panel ◽  
X Ray

Micro-electro-mechanical system fabrication technology applied to large area x-ray image sensor arrays

2001 ◽  
Vol 19 (4) ◽  
pp. 1219-1223 ◽  
Author(s):  
J. H. Daniel ◽  
B. Krusor ◽  
R. B. Apte ◽  
M. Mulato ◽  
K. Van Schuylenbergh ◽  
...  
Keyword(s):  
Mechanical System ◽  
Sensor Arrays ◽  
Micro Electro Mechanical System ◽  
Image Sensor ◽  
Fabrication Technology ◽  
Large Area ◽  
X Ray ◽  
Area X

MEMS Materials and Fabrication Technology on Large Areas: The Example of an X-ray Imager

2000 ◽  
Vol 657 ◽  
Author(s):  
J.H. Daniel ◽  
B. Krusor ◽  
R. Lau ◽  
J.P. Lu ◽  
Y. Wang ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Image Sensor ◽  
Large Area ◽  
Interlayer Dielectric ◽  
X Ray ◽  
Glass Substrates ◽  
Potential Applications ◽  
Mems Technology ◽  
Thick Photoresist ◽  
Silicon Based

ABSTRACTMicromachining has potential applications for large area image sensors and displays, but conventional MEMS technology, based on crystalline silicon wafers cannot be used. Instead, large area devices use deposited films on glass substrates. This presents many challenges for MEMS, both as regards materials for micro-machined structures and the integration with large area electronic devices. We are exploring the novel thick photoresist SU-8, as well as plating techniques for the fabrication of large area MEMS. As an example of its application, we have applied this MEMS technology to improve the performance of an amorphous silicon based image sensor array. SU-8 is explored as the structural material for the X-ray conversion screen and as a thick interlayer dielectric for the thin film readout electronics of the imager.

OPDIMA: large-area CCD-based x-ray image sensor for spot imaging and biopsy control in mammography

1999 ◽  
Author(s):  
Stefan J. Thunberg ◽  
Hartmut Sklebitz ◽  
Bengt Ekdahl ◽  
Lothar Baetz ◽  
Anders Lundin ◽  
...  
Keyword(s):  
Image Sensor ◽  
Large Area ◽  
X Ray

Experimental Evaluation of a-Se Flat-Panel X-ray Detector for Digital Radiography

2003 ◽  
Vol 764 ◽  
Author(s):  
Jang-Yong Choi ◽  
Ji-Koon Park ◽  
Dong-Gil Lee ◽  
Sang-Sik Kang ◽  
Sang-Hee Nam
Keyword(s):  
Digital Radiography ◽  
Vacuum State ◽  
Bias Field ◽  
Amorphous Selenium ◽  
Modulation Transfer ◽  
Large Area ◽  
Flat Panel ◽  
X Ray ◽  
Active Imaging ◽  
Imaging Performance

AbstractNowadays, large area, flat panel solid state detectors are being investigated for digital radiography. In this paper, development and evaluation of a selenium-based flat-panel digital xray detector are described. The prototype detector has a pixel pitch of 139μm and a total active imaging area of 7″×8.5″, giving a total of 1.9 million pixel. This detector include a x-ray imaging layer of amorphous selenium as a photoconductor which is evaporated in vacuum state on a TFT flat panel, to make signals in proportion to incident x-ray. The film thickness was about 500μm. To evaluate the imaging performance of the digital radiography (DR) system developed in our group, sensitivity, linearity of the response of exposure, the modulation transfer function(MTF) and detective quantum efficiency(DQE) of detector was measured. The measured sensitivity was 4.16×106 ehp/pixel mR at the bias field of 10 V/μm: The beam condition was 41.9 KeV. Measured MTF at 2.5 lp/mm was 52%, and the DQE at 1.5 lp/mm was 75%.

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