Type-II mid-infrared lasers

Author(s):  
Jerry R. Meyer ◽  
William W. Bewley ◽  
Igor Vurgaftman ◽  
Christopher L. Felix ◽  
Linda J. Olafsen ◽  
...  
Keyword(s):  
Type Ii ◽  
1998 ◽  
Author(s):  
I. Vurgaftman ◽  
L.J. Olafsen ◽  
E.H. Aifer ◽  
W.W. Bewley ◽  
C.L. Felix ◽  
...  

1997 ◽  
Vol 484 ◽  
Author(s):  
M. J. Yang ◽  
W. J. Moore ◽  
B. R. Bennett ◽  
B. V. Shanabrook ◽  
J. O. Cross

AbstractThe MBE growth temperature for InAs/InGaSb/InAs/AlSb mid-infrared lasers has been studied. It is found that the best growth temperature is between 370°C and 420°C. A growth temperature above this range will result in excessive interlayer mixing, which degrades the radiative efficiency.


2001 ◽  
Vol 17 (1-2) ◽  
pp. 179-183 ◽  
Author(s):  
M.J. Yang ◽  
J.R. Meyer ◽  
W.W. Bewley ◽  
C.L. Felix ◽  
I. Vurgaftman ◽  
...  

2000 ◽  
Author(s):  
Yury P. Yakovlev ◽  
Konstantin D. Moiseev ◽  
Maya P. Mikhailova ◽  
Andrei M. Monakhov ◽  
Anastasia Astakhova ◽  
...  

2010 ◽  
Vol 49 (14) ◽  
pp. 2606 ◽  
Author(s):  
Steven T. Yang ◽  
Manyalibo J. Matthews ◽  
Selim Elhadj ◽  
Diane Cooke ◽  
Gabriel M. Guss ◽  
...  

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