High-power mid-infrared lasers based on type-II heterostructures with asymmetric band offset confinement

2000 ◽  
Author(s):  
Yury P. Yakovlev ◽  
Konstantin D. Moiseev ◽  
Maya P. Mikhailova ◽  
Andrei M. Monakhov ◽  
Anastasia Astakhova ◽  
...  
Keyword(s):  
High Power ◽  
Band Offset ◽  
Type Ii ◽  
Infrared Lasers ◽  
Mid Infrared

Type-II mid-infrared lasers

2000 ◽  
Author(s):  
Jerry R. Meyer ◽  
William W. Bewley ◽  
Igor Vurgaftman ◽  
Christopher L. Felix ◽  
Linda J. Olafsen ◽  
...  
Keyword(s):  
Type Ii ◽  
Infrared Lasers ◽  
Mid Infrared

High-power and high-efficiency mid-infrared type-II quantum well and interband cascade lasers

1998 ◽  
Author(s):  
Shin Shem Pei ◽  
C.H. T. Lin ◽  
Bao Hua Yang ◽  
Han Q. Le ◽  
Rui Q. Yang ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
High Efficiency ◽  
Type Ii ◽  
Mid Infrared ◽  
Interband Cascade Lasers ◽  
Cascade Lasers

Interband cascade and type-II superlattice mid-infrared lasers

1998 ◽  
Author(s):  
I. Vurgaftman ◽  
L.J. Olafsen ◽  
E.H. Aifer ◽  
W.W. Bewley ◽  
C.L. Felix ◽  
...  
Keyword(s):  
Type Ii ◽  
Infrared Lasers ◽  
Mid Infrared ◽  
Type Ii Superlattice

The Growth of Type-II Infrared Laser Structures

1997 ◽  
Vol 484 ◽  
Author(s):  
M. J. Yang ◽  
W. J. Moore ◽  
B. R. Bennett ◽  
B. V. Shanabrook ◽  
J. O. Cross
Keyword(s):  
Growth Temperature ◽  
Infrared Laser ◽  
Type Ii ◽  
Infrared Lasers ◽  
Mbe Growth ◽  
Mid Infrared ◽  
Radiative Efficiency

AbstractThe MBE growth temperature for InAs/InGaSb/InAs/AlSb mid-infrared lasers has been studied. It is found that the best growth temperature is between 370°C and 420°C. A growth temperature above this range will result in excessive interlayer mixing, which degrades the radiative efficiency.

Type-II antimonide quantum wells for mid-infrared lasers

2001 ◽  
Vol 17 (1-2) ◽  
pp. 179-183 ◽  
Author(s):  
M.J. Yang ◽  
J.R. Meyer ◽  
W.W. Bewley ◽  
C.L. Felix ◽  
I. Vurgaftman ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Type Ii ◽  
Infrared Lasers ◽  
Mid Infrared
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