Total dose effects on CMOS active pixel sensors

Author(s):  
Jan Bogaert ◽  
Bart Dierickx
2015 ◽  
Vol 36 (2) ◽  
pp. 242-248 ◽  
Author(s):  
汪波 WANG Bo ◽  
李豫东 LI Yu-dong ◽  
郭旗 GUO Qi ◽  
刘昌举 LIU Chang-ju ◽  
文林 WEN Lin ◽  
...  

Author(s):  
Marco Battaglia ◽  
Dario Bisello ◽  
Devis Contarato ◽  
Peter Denes ◽  
Piero Giubilato ◽  
...  

2010 ◽  
Vol 57 (4) ◽  
pp. 2135-2141 ◽  
Author(s):  
Serena Mattiazzo ◽  
Marco Battaglia ◽  
Dario Bisello ◽  
Devis Contarato ◽  
Peter Denes ◽  
...  

Author(s):  
S. Dhombres ◽  
A. Michez ◽  
J. Boch ◽  
S. Beauvivre ◽  
J. -R. Vaille ◽  
...  

2017 ◽  
Vol 897 ◽  
pp. 579-582
Author(s):  
Sethu Saveda Suvanam ◽  
Luigia Lanni ◽  
Bengt Gunnar Malm ◽  
Carl Mikael Zetterling ◽  
Anders Hallén

In this work, total dose effects on 4H-SiC bipolar junction transistors (BJT) are investigated. Three 4H-SiC NPN BJT chips are irradiated with 3MeV protons with a dose of 1×1011, 1×1012 and 1×1013 cm-2, respectively. From the measured reciprocal current gain it is observed that 4H-SiC NPN BJT exposed to protons suffer both displacement damage and ionization, whereas, a traditional Si BJT suffers mainly from displacement damage. Furthermore, bulk damage introduction rates for SiC BJT were extracted to be 3.3×10-15 cm2, which is an order of magnitude lower compared to reported Si values. Finally, from detailed analysis of the base current at low injection levels, it is possible to distinguish when surface recombination leakage is dominant over bulk recombination.


1997 ◽  
Vol 44 (10) ◽  
pp. 1747-1758 ◽  
Author(s):  
J. Nakamura ◽  
B. Pain ◽  
T. Nomoto ◽  
T. Nakamura ◽  
E.R. Fossum

1984 ◽  
Vol 31 (6) ◽  
pp. 1358-1363 ◽  
Author(s):  
Stan Ropiak ◽  
Kusum Sahu ◽  
Dave Cleveland

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