Development of a serial link transmitter for monolithic active pixel sensors

In this paper, a 5-Gbps serial link transmitter has been designed for monolithic active pixel sensor. The serial link is designed in a commercial 130-nm CMOS technology with a power supply of 1.2 V. The transmitter consists of a 16b/20b encoder, a three-stage 20:1 serializer core, the CML driver with pre-emphasis function, and a high-speed receiver to deal with the external clock. The root mean square jitter of this serial link transmitter is 2.2 ps, indicating a bit error rate of 1 × 10−14. This paper will discuss the design and performance of this serial link transmitter.

Pixel chamber: a solid-state active-target for 3D imaging of charm and beauty

The aim of the pixel chamber project is to develop the first “solid-state bubble chamber” for high precision measurement of charm and beauty. In this paper we will describe the idea for the first silicon active target conceived as an ultra-high granular stack of hundreds of very thin monolithic active pixel sensors (MAPS), which provides continuous, high-resolution 3D tracking of all of the particles produced in proton-silicon interactions occurring inside the detector volume, including open charm and beauty. We will also discuss the high-precision tracking and vertexing performances, showing that the vertex resolution can be up to one order of magnitude better than state-of-the-art detectors like the LHCb one.

The Mu3e experiment

The experiment aims for a single event sensitivity of 2\cdot 10^{-15}2⋅10−15 on the charged lepton flavour violating \mu^+\rightarrow e^+ e^+ e^-μ+→e+e+e− decay. The experimental apparatus, a light-weight tracker based on custom High-Voltage Monolithic Active Pixel Sensors placed in a 1 T magnetic field is currently under construction at the Paul Scherrer Institute, where it will fully use the intense 10^88\mu^+μ+/s beam available. A final sensitivity of 1 \cdot 10^{-16}1⋅10−16 is envisioned for a phase II experiment, driving the development of a new high-intensity continuous muon source which will deliver >10^99\mu^+μ+/s to the experiment.

On the radiation tolerance of CMOS Monolithic Active Pixel Sensors with partially depleted active volume

CMOS Monolithic Active Pixel Sensors for charged particle tracking (CPS) form are ultra-light and highly granular silicon pixel detectors suited for highly sensitive charged particle tracking. Unlike to most other silicon radiation detectors, they rely on standard CMOS technology. This cost efficient approach allows for building particularly small and thin pixels but also introduced, until recently, substantially constraints on the design of the sensors. The most important among them is the missing compatibility with the use of PMOS transistors and depleted charge collection diodes in the pixel. Traditional CPS were thus first of all suited for vertex detectors of relativistic heavy ion and particle physics experiments, which require highest tracking accuracy in combination with moderate time resolution and radiation tolerance. This work reviews the R&D on understanding and improving the radiation tolerance of traditional CPS with non- and partially depleted active medium as pioneered by the MIMOSA-series developed by the IPHC Strasbourg. It introduces the specific measurement methods used to assess the radiation tolerance of those non-standard pixels. Moreover, it discusses the major mechanisms of radiation damage and procedures for radiation hardening, which allowed to extend the radiation tolerance of the devices by more than an order of magnitude.