Radiation tolerance of GaN: the balance between radiation-stimulated defect annealing and defect stabilization by implanted atoms

Realization of radiation-hard electronic devices able to work in harsh environments requires deep understanding the processes of defect formation/evolution occurring in semiconductors bombarded by energetic particles. In the present work we address such intriguing radiation phenomenon as high radiation tolerance of GaN and analyze structural disorder employing advanced co-irradiation schemes where low and high energy implants with different ions have been used. Channeling analysis revealed that the interplay between radiation-stimulated defect annealing and defect stabilization by implanted atoms dominates defect formation in the crystal bulk. Furthermore, the balance between these two processes depends on implanted species. In particular, strong damage enhancement leading to the complete GaN bulk amorphization observed for the samples pre-implanted with fluorine ions, whereas the co-irradiation of the samples pre-implanted with such elements as neon, phosphorus, and argon ions leads to a decrease of the damage.

The journey of Deinococcus radiodurans; a perspective

: Deinococcus radiodurans has been recognized for its robustness and recorded in the Guinness Book of World Records as the world's toughest known bacterium. In essence, the title comes from its ability to survive extreme conditions such as severe drought (desiccation) and radiation tolerance up to 15000 Gy, which is more than 250 times of E. coli and about 3000 times of humans. Due to its high tolerance to all kinds of genotoxic stress, such as desiccation, UV, X-rays, and oxidants, D. radiodurans is a well-suited model organism for microbial radiation resistance studies. The DNA damage-responsive gene expression is an important component of post-stress recovery where the cell shows a great multiplicity of genomes leading to the highly proficient recombinational DNA repair. This article pitches light on the unique properties of D. radiodurans, unfolding its journey so far as well as important molecular discoveries, prospects, and biotechnological applications.

Single Event Effect Analysis of SiGe Low Noise Amplifier

This paper analyzes the single event transient (SET) response of low noise amplifier (LNA) designed using SiGe heterojunction bipolar transistors (HBT). To verify the radiation tolerance of the proposed LNA, a total of four cascode configurations were designed. Comprehensive mixed-mode simulations were performed to evaluate the SET susceptibility of considered LNA cascode configurations, and we have analyzed how the strike parameters affect their output response. In this fact the strike position, linear energy transfer (LET), and track radius, were varied, and the resulting transients were compared for the different LNA configurations. Through this study, the potential capability of the inverse mode SiGe heterojunction bipolar transistor (HBT) in LNA radiation tolerance was confirmed for various strike operating conditions. It has been demonstrated that the single event sensitivity was reduced for LNA employing inverse mode SiGe HBT for strike device. The strike influence on the different LNA configurations response depends on strike LET, where a reduced SET variation is observed for high LET.