Wavelength tuning of GaAs/AlGaAs quantum well infrared photodetectors by rapid thermal annealing and proton implantation

2000 ◽  
Author(s):  
Ning Li ◽  
Xingquan Liu ◽  
Na Li ◽  
Wei Lu ◽  
Xianzhang Yuan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Wavelength Tuning ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors ◽  
Proton Implantation

scholarly journals Wavelength tuning of surface plasmon coupled quantum well infrared photodetectors

2018 ◽  
Vol 26 (1) ◽  
pp. 552 ◽  
Author(s):  
Wei-Cheng Hsu ◽  
Hong-Shi Ling ◽  
Shiang-Yu Wang ◽  
Chien-Ping Lee
Keyword(s):  
Quantum Well ◽  
Surface Plasmon ◽  
Wavelength Tuning ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors ◽  
Coupled Quantum Well

Red shifting the intersubband response of quantum‐well infrared photodetectors by thermal annealing

1996 ◽  
Vol 80 (8) ◽  
pp. 4737-4740 ◽  
Author(s):  
J. I. Malin ◽  
P. Liu ◽  
D. K. Sengupta ◽  
W. C. Fang ◽  
S. L. Chuang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors

Wavelength Tuning of GaAs/AlGaAs Quantum-Well Infrared Photodetectors by Thermal Interdiffusion

1999 ◽  
Vol 38 (Part 1, No. 9A) ◽  
pp. 5044-5045 ◽  
Author(s):  
Xingquan Liu ◽  
Ning Li ◽  
Xiaoshuang Chen ◽  
Wei Lu ◽  
Wenlan Xu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Wavelength Tuning ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors

Ion Implantation Induced Interdiffusion in Quantum Wells for Optoelectronic Device Integration

2001 ◽  
Vol 692 ◽  
Author(s):  
L. Fu ◽  
H. H. Tan ◽  
M. I. Cohen ◽  
C. Jagadish ◽  
L. V. Dao ◽  
...  
Keyword(s):  
Quantum Well ◽  
Ion Implantation ◽  
Quantum Wells ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Blue Shift ◽  
Optoelectronic Device ◽  
Emission Wavelength ◽  
Device Integration ◽  
Proton Implantation

AbstractIon implantation induced intermixing of GaAs/AlGaAs and InGaAs/AlGaAs quantum wells was studied using low temperature photoluminescence. Large energy shifts were observed with proton implantation and subsequent rapid thermal annealing. Energy shifts were found to be linear as a function of dose for doses as high as ∼5×1016 cm−2. Proton implantation and subsequent rapid thermal annealing was used to tune the emission wavelength of InGaAs quantum well lasers as well as detection wavelength of GaAs/AlGaAs quantum well infrared photodetectors (QWIPs). Emission wavelength of lasers showed blue shift whereas detection wavelength of QWIPs was red shifted with intermixing.

Wavelength tuning and absorption line shape of quantum well infrared photodetectors

1992 ◽  
Vol 61 (15) ◽  
pp. 1781-1783 ◽  
Author(s):  
K. K. Choi ◽  
M. Taysing‐Lara ◽  
P. G. Newman ◽  
W. Chang ◽  
G. J. Iafrate
Keyword(s):  
Quantum Well ◽  
Absorption Line ◽  
Line Shape ◽  
Wavelength Tuning ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors ◽  
Absorption Line Shape

Corrugated Quantum Well Infrared Photodetectors and Arrays

1999 ◽  
Author(s):  
K. K. Choi ◽  
C. J. Chen ◽  
L. P. Rohkinson ◽  
N. C. Das ◽  
M. Jhabvala
Keyword(s):  
Quantum Well ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors
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