Large-format 1280 x 1024 full-frame CCD image sensor with a lateral-overflow drain and transparent gate electrode

Author(s):  
Eric G. Stevens ◽  
Stephen L. Kosman ◽  
John C. Cassidy ◽  
Winchyi Chang ◽  
Wesley A. Miller
1992 ◽  
Vol 262 ◽  
Author(s):  
Biay-Cheng Hseih ◽  
S. Kosman ◽  
Y.C. Lo ◽  
K. Jayakar ◽  
M. Mehra ◽  
...  

ABSTRACTThe electrical and optical properties of Indium-Tin-Oxide (ITO) films, deposited by radio frequency (r.f.) magnetron sputtering, were studied. ITO films, when deposited using optimum sputtering conditions, were reproducibly prepared with resistivity as low as 1.5 × 10−4 Ω-cm and optical transmissivity higher than 80% over the wavelength range of interest. Device stability when ITO is used as a replacement for polysilicon as a gate electrode in silicon charge-coupled device (CCD) image sensors was also studied. After an anneal process at 950 °C in N2 the device degraded. The degradation can be attributed to the generation of oxide charge and interface states in the ITO/SiO2/Si system.


Author(s):  
S.L. Kosman ◽  
E.G. Stevens ◽  
J.C. Cassidy ◽  
W.C. Chang ◽  
P. Roselle ◽  
...  

Author(s):  
Maksim E. Cherniak ◽  
Roman K. Mozhaev ◽  
Alexander A. Pechenkin ◽  
Dmitry V. Boychenko ◽  
Alexander Y. Nikiforov

2014 ◽  
Vol 4 (3) ◽  
pp. 274-280 ◽  
Author(s):  
Ying Chen ◽  
Wanpeng Xu ◽  
Rongsheng Zhao ◽  
Xiangning Chen

Author(s):  
M. Sasaki ◽  
Y. Koya ◽  
H. Yamashita ◽  
S. Ohsawa ◽  
R. Miyagawa ◽  
...  

2005 ◽  
Author(s):  
I. Akiyama ◽  
T. Tanaka ◽  
E. Oda ◽  
T. Kamata ◽  
K. Masubuchi ◽  
...  

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