Type-I GaSb based diode lasers operating at room temperature in 2 to 3.5 μm spectral region

2010 ◽  
Author(s):  
J. Chen ◽  
T. Hosoda ◽  
G. Tsvid ◽  
R. Liang ◽  
D. Westerfeld ◽  
...  
Keyword(s):  
Spectral Region ◽  
Room Temperature ◽  
Diode Lasers ◽  
Type I

Type-I QW cascade diode lasers for spectral region above 3 μm

2016 ◽  
Author(s):  
L. Shterengas ◽  
T. Hosoda ◽  
M. Wang ◽  
T. Feng ◽  
G. Kipshidze ◽  
...  
Keyword(s):  
Spectral Region ◽  
Diode Lasers ◽  
Type I

PROGRESS IN DEVELOPMENT OF ROOM TEMPERATURE CW GASB BASED DIODE LASERS FOR 2-3.5 μM SPECTRAL REGION

2013 ◽  
Author(s):  
TAKASHI HOSODA ◽  
JIANFENG CHEN ◽  
GENE TSVID ◽  
DAVID WESTERFELD ◽  
RUI LIANG ◽  
...  
Keyword(s):  
Spectral Region ◽  
Room Temperature ◽  
Diode Lasers

Type-I Diode Lasers for Spectral Region Above 3 μm

2011 ◽  
Vol 17 (5) ◽  
pp. 1426-1434 ◽  
Author(s):  
Gregory Belenky ◽  
Leon Shterengas ◽  
Gela Kipshidze ◽  
Takashi Hosoda
Keyword(s):  
Spectral Region ◽  
Diode Lasers ◽  
Type I

Type-I GaSb based single lateral mode diode ridge lasers operating at room temperature in 3.1-3.2 μm spectral region

2011 ◽  
Author(s):  
G. Tsvid ◽  
T. Hosoda ◽  
J. Chen ◽  
G. Kipshidze ◽  
L. Shterengas ◽  
...  
Keyword(s):  
Spectral Region ◽  
Room Temperature ◽  
Type I ◽  
Lateral Mode ◽  
Ridge Lasers

Novel Design of Type I High Power Mid-IR Diode Lasers for Spectral Region 3 - 4.2 Microns

2014 ◽  
Author(s):  
Leon Shterengas ◽  
Gregory Belenky ◽  
David Westerfeld
Keyword(s):  
High Power ◽  
Spectral Region ◽  
Diode Lasers ◽  
Type I ◽  
Novel Design

MID-INFRARED GaSb-BASED LASERS WITH TYPE-I HETEROINTERFACES

2002 ◽  
Vol 12 (04) ◽  
pp. 1025-1038 ◽  
Author(s):  
D. V. DONETSKY ◽  
R. U. MARTINELLI ◽  
G. L. BELENKY
Keyword(s):  
High Power ◽  
Room Temperature ◽  
Continuous Wave ◽  
Diode Lasers ◽  
Current Mode ◽  
Pulsed Current ◽  
Device Performance ◽  
Type I ◽  
Mid Infrared ◽  
Double Heterojunction

The design of room-temperature, InGaAsSb/AlGaAsSb diode lasers has evolved from the first double-heterojunction lasers described in 1980 that operated in the pulsed-current mode to present-day continuous–wave (CW), high-power, quantum–well diode lasers. We discuss in detail recent results from type-I-heterostructure, GaSb-based CW room-temperature diode lasers. The devices operate within the wavelength range of 1.8 to 2.7 μm, providing output powers up to several Watts. We analyze the factors limiting device performance.

Room temperature operated 3.1μm type-I GaSb-based diode lasers with 80mW continuous-wave output power

2008 ◽  
Vol 92 (17) ◽  
pp. 171111 ◽  
Author(s):  
L. Shterengas ◽  
G. Belenky ◽  
G. Kipshidze ◽  
T. Hosoda
Keyword(s):  
Output Power ◽  
Room Temperature ◽  
Continuous Wave ◽  
Diode Lasers ◽  
Type I ◽  
Continuous Wave Output Power
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