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Room-temperature 3.73 µm GaSb-based type-I quantum-well lasers with quinternary barriers
Semiconductor Science and Technology
◽
10.1088/0268-1242/27/3/032001
◽
2012
◽
Vol 27
(3)
◽
pp. 032001
◽
Cited By ~ 59
Author(s):
Kristijonas Vizbaras
◽
Markus-Christian Amann
Keyword(s):
Quantum Well
◽
Room Temperature
◽
Quantum Well Lasers
◽
Type I
Download Full-text
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Design of high-power room-temperature continuous-wave GaSb-based type-I quantum-well lasers with > 2.5 µm
Semiconductor Science and Technology
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10.1088/0268-1242/19/5/016
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2004
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Vol 19
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pp. 655-658
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Cited By ~ 76
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G L Belenky
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◽
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Quantum Well
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Continuous Wave
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The Nature of Auger Recombination in Type-I Quantum Well Lasers Operating in the Mid-Infrared
IEEE Journal of Selected Topics in Quantum Electronics
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10.1109/jstqe.2021.3111693
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2021
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pp. 1-1
Author(s):
Timothy David Eales
◽
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Keyword(s):
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Auger Recombination
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Quantum Well Lasers
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◽
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Room-Temperature AlGaAsSb/InGaAsSb Multi-Quantum-Well Lasers with High Characteristic Temperature
Chinese Physics Letters
◽
10.1088/0256-307x/20/8/357
◽
2003
◽
Vol 20
(8)
◽
pp. 1376-1378
◽
Cited By ~ 1
Author(s):
Zhang Xiong
◽
Li Ai-Zhen
◽
Zheng Yan-Lan
◽
Xu Gang-Yi
◽
Qi Ming
Keyword(s):
Quantum Well
◽
Room Temperature
◽
Characteristic Temperature
◽
Quantum Well Lasers
◽
Multi Quantum Well
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1.34 [micro sign]m GaInNAs quantum well lasers with low room-temperature threshold current density
Electronics Letters
◽
10.1049/el:20061325
◽
2006
◽
Vol 42
(16)
◽
pp. 923
◽
Cited By ~ 13
Author(s):
M. Hopkinson
◽
C.Y. Jin
◽
H.Y. Liu
◽
P. Navaretti
◽
R. Airey
Keyword(s):
Quantum Well
◽
Current Density
◽
Room Temperature
◽
Threshold Current
◽
Threshold Current Density
◽
Quantum Well Lasers
◽
Temperature Threshold
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Above-room-temperature mid-infrared lasing from vertical-cavity surface-emitting PbTe quantum-well lasers
Applied Physics Letters
◽
10.1063/1.1347404
◽
2001
◽
Vol 78
(7)
◽
pp. 862-864
◽
Cited By ~ 47
Author(s):
W. Heiss
◽
T. Schwarzl
◽
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◽
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◽
K. Reimann
Keyword(s):
Quantum Well
◽
Room Temperature
◽
Quantum Well Lasers
◽
Cavity Surface
◽
Mid Infrared
◽
Vertical Cavity Surface
◽
Vertical Cavity
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Room temperature performance of low threshold 1.34-1.44-/spl mu/m GaInNAs-GaAs quantum-well lasers grown by molecular beam epitaxy
IEEE Photonics Technology Letters
◽
10.1109/lpt.2005.846567
◽
2005
◽
Vol 17
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◽
pp. 1142-1144
◽
Cited By ~ 3
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A. Hierro
◽
J.M. Ulloa
◽
E. Calleja
◽
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◽
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◽
...
Keyword(s):
Molecular Beam Epitaxy
◽
Quantum Well
◽
Room Temperature
◽
Molecular Beam
◽
Quantum Well Lasers
◽
Temperature Performance
◽
Low Threshold
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Room Temperature Observation of the Energy Levels of Mid-Infrared Quantum Well Lasers using Fourier Transform Infrared-Surface Photovoltage Spectroscopy
Applied Physics Express
◽
10.1143/apex.1.062001
◽
2008
◽
Vol 1
◽
pp. 062001
◽
Cited By ~ 4
Author(s):
Tarun Kumar Sharma
◽
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◽
Thomas Jeff Cockburn Hosea
◽
Geoffrey Richard Nash
◽
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Keyword(s):
Fourier Transform
◽
Quantum Well
◽
Room Temperature
◽
Energy Levels
◽
Fourier Transform Infrared
◽
Quantum Well Lasers
◽
Surface Photovoltage
◽
Mid Infrared
◽
Surface Photovoltage Spectroscopy
◽
Temperature Observation
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InP-based type-I quantum well lasers up to 2.9 μm at 230 K in pulsed mode on a metamorphic buffer
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Quantum Well
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Quantum Well Lasers
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◽
Metamorphic Buffer
◽
Pulsed Mode
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Low‐threshold room‐temperature cw operation of (AlGaAs)m(GaAs)nsuperlattice quantum well lasers emitting at ∼680 nm
Applied Physics Letters
◽
10.1063/1.98895
◽
1987
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Vol 51
(10)
◽
pp. 707-709
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Cited By ~ 13
Author(s):
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T. Suyama
◽
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Quantum Well
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Room Temperature
◽
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Cw Operation
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High-power and low-loss room temperature operation of 2.4μm GaInAsSb/AlGaAsSb type-I strained quantum-well laser diodes
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◽
Author(s):
Yuzhi Song
◽
Jiakun Song
◽
Yu Zhang
◽
Kangwen Li
◽
Yun Xu
◽
...
Keyword(s):
Quantum Well
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High Power
◽
Room Temperature
◽
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◽
Type I
◽
Low Loss
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Quantum Well Laser
◽
Strained Quantum Well
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Room Temperature Operation
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