ABSTRACTApplication of porous silicon oxide thin films to nanotechnology is under intensive investigation. Introducing a large amount of nano pores into a silicon oxide matrix is important to develop low-k dielectrics for future ultra-large-scale integrated circuits (ULSI). In this work, we applied variable-energy positron annihilation to the characterization of porous silicon oxide thin films fabricated on silicon wafers by sputtering and spincoating. It was found that the sputtered film has higher open pore connectivity than that of the spincoated low-k film.
AbstractThis article considers the possibility of applying the positron annihilation spectroscopy method for investigating the pore space of rocks from oil-gas and methane-coal deposits. The diagnostics of the structure was performed using the method of spectrometry of angular correlation of annihilation rays (ACAR). Using the samples of porous silicon, the authors have shown the applicability of the ACAR method for determination of the average dimensions of spherical and cylindrical nanosized objects and their concentration
Application of positron spectroscopy for investigation of threshold space of oil-gas rocks