scholarly journals Application of positron spectroscopy for investigation of threshold space of oil-gas rocks

2014 ◽  
Vol 12 (12) ◽  
pp. 1280-1284
Author(s):  
Konstantin Arefyev ◽  
Victor Grafutin ◽  
Evgeny Prokopyev ◽  
Andrey Lider ◽  
Roman Laptev ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Positron Annihilation ◽  
Angular Correlation ◽  
Pore Space ◽  
Positron Annihilation Spectroscopy ◽  
Spectroscopy Method ◽  
Positron Spectroscopy ◽  
Coal Deposits ◽  
Oil Gas

AbstractThis article considers the possibility of applying the positron annihilation spectroscopy method for investigating the pore space of rocks from oil-gas and methane-coal deposits. The diagnostics of the structure was performed using the method of spectrometry of angular correlation of annihilation rays (ACAR). Using the samples of porous silicon, the authors have shown the applicability of the ACAR method for determination of the average dimensions of spherical and cylindrical nanosized objects and their concentration

Effect of Irradiation Doses on AlCu6.5 Alloy Using Positron Annihilation Doppler Broadening Technique

2008 ◽  
Vol 278 ◽  
pp. 15-24
Author(s):  
M. Abdel-Rahman ◽  
Yahia A. Lotfy ◽  
M.A. Abdel-Rahman ◽  
Emad A. Badawi
Keyword(s):  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy ◽  
Dose Effect ◽  
Doppler Broadening ◽  
Γ Irradiation ◽  
Cu Alloy ◽  
Versatile Tool ◽  
Parameter Values ◽  
Line Shape Parameter

Positron Annihilation Spectroscopy (PAS) is a powerful and versatile tool for the study of the microscopic structure of materials. Doppler Broadening Positron Annihilation Technique (DBPAT) is the fastest technique used among positron annihilation techniques. The dose effect in Al-6.5at. % Cu alloy was investigated by means of DBPAT. An abrupt change in both the S and W line-shape parameter values occurred at 70 kGy of irradiation. The S- and W-Parameters of the trapped positrons at 70 kGy of γ−irradiation dose are about 48 % and 14 % respectively. The S- versus W-parameter reveals a linear relationship indicating the presence of only one type of defect. The S- and W-parameters have been used in the determination of the positron trapping rate and the grain size of the AlCu6.5 alloy.

Characterization of Atomic Defects and Their Aggregates Using Positron Annihilation Spectroscopy

1984 ◽  
Vol 41 ◽  
Author(s):  
R. W. Siegel ◽  
M. J. Fluss ◽  
L. C. Smedskjaer
Keyword(s):  
Electronic Structure ◽  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy ◽  
Molecular Solids ◽  
Microstructure Development ◽  
Post Irradiation ◽  
Defect Sites ◽  
Atomic And Electronic Structure

AbstractPositrons localize in trapped states at a variety of defect sites in solids, from which they subsequently annihilate with unique observable characteristics. As such, the positron is a valuable probe for the study of these defects. Positron annihilation spectroscopy (PAS) has made significant contributions in recent years to the determination of atomic defect properties in metals and alloys, and in molecular solids as well. It has also been used extensively in the monitoring and characterization of vacancy-like microstructure development, as occurs during post-irradiation annealing. The characterization of defects using PAS is selectively reviewed and some possibilities for using the positron as a localized probe of the atomic and electronic structure of atomic defects and their aggregates are discussed.

Study of Pore Architecture in Silicon Oxide Thin Films by Variable-energy Positron Annihilation Spectroscopy

2002 ◽  
Vol 751 ◽  
Author(s):  
Kenji Ito ◽  
Yoshinori Kobayashi ◽  
Runsheng Yu ◽  
Kouichi Hirata ◽  
Hisashi Togashi ◽  
...  
Keyword(s):  
Thin Films ◽  
Porous Silicon ◽  
Integrated Circuits ◽  
Positron Annihilation ◽  
Large Scale ◽  
Silicon Oxide ◽  
Positron Annihilation Spectroscopy ◽  
Oxide Thin Films ◽  
Intensive Investigation ◽  
Variable Energy

ABSTRACTApplication of porous silicon oxide thin films to nanotechnology is under intensive investigation. Introducing a large amount of nano pores into a silicon oxide matrix is important to develop low-k dielectrics for future ultra-large-scale integrated circuits (ULSI). In this work, we applied variable-energy positron annihilation to the characterization of porous silicon oxide thin films fabricated on silicon wafers by sputtering and spincoating. It was found that the sputtered film has higher open pore connectivity than that of the spincoated low-k film.

Determination of the size of vacancy-type defects in angstrom ranges by positron annihilation spectroscopy

2011 ◽  
Vol 40 (6) ◽  
pp. 428-435 ◽  
Author(s):  
V. I. Grafutin ◽  
I. N. Meshkov ◽  
E. P. Prokop’ev ◽  
N. O. Khmelevskii ◽  
S. L. Yakovenko
Keyword(s):  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy

Direct experimental observation of the positronium atom in porous silicon by positron annihilation spectroscopy

JETP Letters ◽  
2005 ◽  
Vol 81 (11) ◽  
pp. 548-550 ◽  
Author(s):  
S. A. Gavrilov ◽  
V. I. Grafutin ◽  
O. V. Ilyukhina ◽  
G. G. Myasishcheva ◽  
E. P. Prokop’ev ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Positron Annihilation ◽  
Experimental Observation ◽  
Positron Annihilation Spectroscopy ◽  
Positronium Atom
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