Modeling of neutral-atom scattering at the surface of a crystal for the case of grazing incidence

Author(s):  
L. A. Avakyan ◽  
T. I. Zhilina ◽  
V. S. Malyshevsky ◽  
G. V. Fomin
2D Materials ◽  
2018 ◽  
Vol 5 (4) ◽  
pp. 045002 ◽  
Author(s):  
Amjad Al Taleb ◽  
Gloria Anemone ◽  
Rodolfo Miranda ◽  
Daniel Farías
Keyword(s):  

1990 ◽  
Vol 233 (1-2) ◽  
pp. 153-162 ◽  
Author(s):  
B.F. Mason ◽  
C. MacPherson ◽  
B.R. Williams
Keyword(s):  

1977 ◽  
Vol 16 (3) ◽  
pp. 921-926 ◽  
Author(s):  
M. J. Mehl ◽  
W. L. Schaich

Author(s):  
Maxime Debiossac ◽  
Peng Pan ◽  
Philippe Roncin

In the elastic regime, GIFAD is equivalent to TEAS with an effective energy E⊥ between 1 meV and 1 eV providing a high sensitivity to topology and to attractive forces. The inelastic regime merges to the classical limit and is still in development.


2020 ◽  
Vol 63 (2) ◽  
pp. 209-213
Author(s):  
D. A. Moiseenko ◽  
A. Yu. Shestakov ◽  
O. L. Weisberg ◽  
R. N. Zhuravlev ◽  
S. D. Shuvalov ◽  
...  

Author(s):  
Shunjiro Fujii ◽  
Yusuke Michishita ◽  
Nobuhiko Miyamae ◽  
Kenjiro Oura ◽  
Mitsuhiro Katayama

2012 ◽  
Author(s):  
G. K. Sahu ◽  
S. Baruah ◽  
S. Lahiri ◽  
S. Mahapatra ◽  
R. Kalra ◽  
...  

1994 ◽  
Vol 354 ◽  
Author(s):  
R.E. Dunin-Borkowski ◽  
W.M. Stobbs

AbstractThe compositional profile of an interlayer inferred from Fresnel contrast data is usually determined assuming that the variation in the measured mean forward scattering potential is associated with changes in neutral atom scattering factor and atomic density. However, the technique is currently being applied to systems for which the form and the magnitude of the potential at the layer can be affected strongly by changes in ionicity. Here, we show how the analysis of ‘delta-doped’ layers in semiconductors, which contain thin layers of impurity ions at low concentrations, requires the analysis of not only the effect of strains on the density but also the contribution to the potential from charged ions surrounded by a wider spread of free carriers.


1980 ◽  
Vol 21 (4) ◽  
pp. 1177-1184 ◽  
Author(s):  
M. J. Mehl ◽  
W. L. Schaich

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