Complex investigations of effects of charging a polymer resist (PMMA) during electron lithography

2013 ◽  
Vol 42 (2) ◽  
pp. 89-98 ◽  
Author(s):  
E. I. Rau ◽  
E. N. Evstaf’eva ◽  
S. I. Zaitsev ◽  
M. A. Knyazev ◽  
A. A. Svintsov ◽  
...  
Keyword(s):  
Author(s):  
J. K. Maurin

Conductor, resistor, and dielectric patterns of microelectronic device are usually defined by exposure of a photosensitive material through a mask onto the device with subsequent development of the photoresist and chemical removal of the undesired materials. Standard optical techniques are limited and electron lithography provides several important advantages, including the ability to expose features as small as 1,000 Å, and direct exposure on the wafer with no intermediate mask. This presentation is intended to report how electron lithography was used to define the permalloy patterns which are used to manipulate domains in magnetic bubble memory devices.The electron optical system used in our experiment as shown in Fig. 1 consisted of a high resolution scanning electron microscope, a computer, and a high precision motorized specimen stage. The computer is appropriately interfaced to address the electron beam, control beam exposure, and move the specimen stage.


2010 ◽  
Vol 19 (04) ◽  
pp. 753-759 ◽  
Author(s):  
NAOYUKI KITAMURA ◽  
KOHEI FUKUMI ◽  
JUNICHI NAKAMURA ◽  
TATSUO HIDAKA ◽  
TAKUROU IKEDA ◽  
...  

We have developed zinc-bismuth-phosphate glasses, which have deformation temperatures under 450°C and refractive indices higher than 1.7, in order to produce an antireflection structure on the surface by a glass-imprinting process. Two-dimensionally arrayed conical cavities of sub-wavelength size were fabricated on a SiC mold by electron lithography and dry etching techniques. The sub-wavelength periodic structure was transferred onto the glass surface by a glass-imprinting process using the mold. The sub-wavelength structure suppressed the reflectance by approximately 90%. A weak maximum was observed in the reflection spectra around 400–500 nm, which decreased in intensity and shifted toward shorter wavelengths with decreasing pitch.


1984 ◽  
Vol 2 (4) ◽  
pp. 259-279 ◽  
Author(s):  
B.J.G.M. Roelofs ◽  
J.E. Barth

2006 ◽  
Vol 55 (11) ◽  
pp. 5803
Author(s):  
Xiao Pei ◽  
Zhang Zeng-Ming ◽  
Sun Xia ◽  
Ding Ze-Jun

2003 ◽  
Vol 9 (S02) ◽  
pp. 300-301
Author(s):  
Nan Jiang ◽  
Gary Hembree ◽  
John C. H. Spence
Keyword(s):  

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