Fabrication of Functionally Graded Diamond/Al Composites by Liquid–Solid Separation Technology

The electronic packaging shell, the necessary material for hermetic packaging of large microelectronic device chips, is made by mechanical processing of a uniform block. However, the property variety requirements at different positions of the shell due to the performance have not been solved. An independently developed liquid–solid separation technology is applied to fabricate the diamond/Al composites with a graded distribution of diamond particles. The diamond content decreases along a gradient from the bottom of the shell, which houses the chips, to the top of the shell wall, which is welded with the cover plate. The bottom of the shell has a thermal conductivity (TC) of 169 W/mK, coefficient of thermal expansion (CTE) of 11.0 × 10−6/K, bending strength of 88 MPa, and diamond content of 48 vol.%. The top of the shell has a TC of 108 W/mK, CTE of 19.3 × 10−6/K, bending strength of 175 MPa, and diamond content of 15 vol.%, which solves the special requirements of different parts of the shell and helps to improve the thermal stability of packaging components. Moreover, the interfacial characteristics are also investigated. This work provides a promising approach for the preparation of packaging shells by near-net shape forming.

Advances in Large-Area Microelectronic Device Deprocessing for Physical Failure Analyses and Quality Control

Focused ion beam (FIB) techniques are often used when delayering semiconductor devices. However, using FIB technology for device delayering has limitations. One of these limitations prevents the exposure of a large slope area on the sample, which reveals all layers simultaneously. The delayering process is complex and requires prior process knowledge, such as cross-section architecture, composition, and layer uniformity. This paper discusses advances in semiconductor device deprocessing for product development, failure analysis, and quality control using low-energy, argon broad ion beam (BIB) milling. Ar BIB milling is a practical solution for accurate delayering of advanced microelectronic devices. Results of the spot milling of a whole 300 mm wafer experiment and top-down delayering of wafer pieces experiment show that successful device delayering can be achieved by either spot milling or layer-by-layer milling. These two strategies are easily achieved, for either small wafer pieces or full 300 mm wafer investigation.

Interdigitated microelectronic bandage augments hemostasis and clot formation at low applied voltagein vitroandin vivo

An interdigitated microelectronic device that applies low voltage (<9 V) electrical field augments hemostasisin vitroandin vivo.