Far-field patterns of line sources mounted between four-dielectric substrates

1992 ◽  
Vol 70 (2-3) ◽  
pp. 173-178 ◽  
Author(s):  
Ioanna Diamandi ◽  
Costas Mertzianidis ◽  
John N. Sahalos
Keyword(s):  
Remote Sensing ◽  
Line Source ◽  
Dielectric Substrate ◽  
Microstrip Antennas ◽  
Field Pattern ◽  
Substrate Thickness ◽  
Far Field ◽  
Dielectric Substrates ◽  
Field Patterns ◽  
Far Field Pattern

The far-field pattern characteristics of line sources lying between the slabs of a four-dielectric substrate configuration are presented. The patterns are calculated for several cases of the substrate thickness as well as for several line-source locations. The considerations that are made give useful applications in remote sensing and microstrip antennas.

scholarly journals Effect of GaN substrate thickness on the optical field of InGaN lasers diodes

2018 ◽  
Vol 64 (3) ◽  
pp. 254
Author(s):  
Juan Antonio Martin Alfonso ◽  
M. Sanchez
Keyword(s):  
Contact Layer ◽  
Optical Field ◽  
Field Pattern ◽  
Substrate Thickness ◽  
Far Field ◽  
Half Maximum ◽  
Graded Index ◽  
Al Content ◽  
Field Patterns ◽  
Far Field Pattern

In this work the influence of GaN substrate thickness on the near and far-field patternsof InGaN lasers structures is analyzed. In simulation a conventional separateconfinement heterostructure of InGaN-MQW / GaN / AlGaN is considered. Afluctuating behavior is found, showing that for some values of the substrate thicknessthe near and far- field patterns can be optimized and there are critical values of thesubstrate thickness that produce the lowest values of the confinement factor and thehigher values of the full wide half-maximum of the far field. It is also shown that bysubstituting the GaN contact layer by an AlxGa1-xN layer with a parabolic variation ofthe Al content it is possible to reduce the optical field leakage to substrate. Resultsindicated that properly choosing the thickness of the substrate and replacing the n-GaNcontact layer by a graded-index (GRIN) AlxGa1-xN layer it is possible to improve boththe confinement factor and Far field pattern in nitride lasers.

Radiation of a line source mounted between two dielectric substrates

1990 ◽  
Vol 68 (12) ◽  
pp. 1486-1491 ◽  
Author(s):  
Ioanna Diamandi ◽  
Costas Mertzianidis ◽  
John N. Sahalos
Keyword(s):  
Remote Sensing ◽  
Antenna Arrays ◽  
Line Source ◽  
Finite Thickness ◽  
Dielectric Substrate ◽  
Microstrip Antennas ◽  
The Other ◽  
Bottom Surface ◽  
Radiation Characteristics ◽  
Dielectric Substrates

The radiation characteristics of a line source lying on the bottom surface of a dielectric substrate that is mounted on the top of another one are presented. The pattern is calculated for two different cases. One is for infinite thickness of the second substrate and the other is for finite thickness. Some interesting considerations useful for applications in remote sensing, microstrip antennas, and antenna arrays are made.

Effect of transverse mode structure on the far field pattern of metal-metal terahertz quantum cascade lasers

2008 ◽  
Vol 104 (12) ◽  
pp. 124513 ◽  
Author(s):  
P. Gellie ◽  
W. Maineult ◽  
A. Andronico ◽  
G. Leo ◽  
C. Sirtori ◽  
...  
Keyword(s):  
Quantum Cascade Lasers ◽  
Transverse Mode ◽  
Field Pattern ◽  
Far Field ◽  
Mode Structure ◽  
Quantum Cascade ◽  
Metal Metal ◽  
Far Field Pattern ◽  
Cascade Lasers

scholarly journals Second harmonic generation from 3D nanoantennas: on the surface and bulk contributions by far-field pattern analysis

2011 ◽  
Vol 19 (27) ◽  
pp. 26752 ◽  
Author(s):  
Alessio Benedetti ◽  
Marco Centini ◽  
Mario Bertolotti ◽  
Concita Sibilia
Keyword(s):  
Second Harmonic Generation ◽  
Harmonic Generation ◽  
Pattern Analysis ◽  
Second Harmonic ◽  
Field Pattern ◽  
Far Field ◽  
Far Field Pattern

scholarly journals Reconstruction of the near-field distribution in an X-ray waveguide array

2017 ◽  
Vol 50 (3) ◽  
pp. 701-711 ◽  
Author(s):  
Qi Zhong ◽  
Lars Melchior ◽  
Jichang Peng ◽  
Qiushi Huang ◽  
Zhanshan Wang ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Field Distribution ◽  
Phase Retrieval ◽  
Near Field ◽  
Field Pattern ◽  
Waveguide Array ◽  
X Ray ◽  
Field Patterns ◽  
Thickness Variations ◽  
Far Field Pattern

Iterative phase retrieval has been used to reconstruct the near-field distribution behind tailored X-ray waveguide arrays, by inversion of the measured far-field pattern recorded under fully coherent conditions. It is thereby shown that multi-waveguide interference can be exploited to control the near-field distribution behind the waveguide exit. This can, for example, serve to create a secondary quasi-focal spot outside the waveguide structure. For this proof of concept, an array of seven planar Ni/C waveguides are used, with precisely varied guiding layer thickness and cladding layer thickness, as fabricated by high-precision magnetron sputtering systems. The controlled thickness variations in the range of 0.2 nm results in a desired phase shift of the different waveguide beams. Two kinds of samples, a one-dimensional waveguide array and periodic waveguide multilayers, were fabricated, each consisting of seven C layers as guiding layers and eight Ni layers as cladding layers. These are shown to yield distinctly different near-field patterns.

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