Resistive state of a thin superconducting strip with an engineered central defect

2019 ◽  
Vol 92 (7) ◽  
Author(s):  
Jose Barba-Ortega ◽  
Miryam R. Joya ◽  
Edson Sardella
Author(s):  
C. Goessens ◽  
D. Schryvers ◽  
J. Van Landuyt ◽  
A. Verbeeck ◽  
R. De Keyzer

Silver halide grains (AgX, X=Cl,Br,I) are commonly recognized as important entities in photographic applications. Depending on the preparation specifications one can grow cubic, octahedral, tabular a.o. morphologies, each with its own physical and chemical characteristics. In the present study crystallographic defects introduced by the mixing of 5-20% iodide in a growing AgBr tabular grain are investigated. X-ray diffractometry reveals the existence of a homogeneous Ag(Br1-xIx) region, expected to be formed around the AgBr kernel. In fig. 1 a two-beam BF image, taken at T≈100 K to diminish radiation damage, of a triangular tabular grain is presented, clearly showing defect contrast fringes along four of the six directions; the remaining two sides show similar contrast under relevant diffraction conditions. The width of the central defect free region corresponds with the pure AgBr kernel grown before the mixing with I. The thickness of a given grain lies between 0.15 and 0.3 μm: as indicated in fig. 2 triangular (resp. hexagonal) grains exhibit an uneven (resp. even) number of twin interfaces (i.e., between + and - twin variants) parallel with the (111) surfaces. The thickness of the grains and the existence of the twin variants was confirmed from CTEM images of perpendicular cuts.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Sera Kwon ◽  
Min-Jung Kim ◽  
Kwun-Bum Chung

AbstractTiOx-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device is a feasible method for increasing the density of the memory cell. Herein, we attempt to obtain a non-volatile multi-level switching memory device that is highly transparent by embedding SiO2 nanoparticles (NPs) into the TiOx matrix (TiOx@SiO2 NPs). The fully transparent resistive switching device is fabricated with an ITO/TiOx@SiO2 NPs/ITO structure on glass substrate, and it shows transmittance over 95% in the visible range. The TiOx@SiO2 NPs device shows outstanding switching characteristics, such as a high on/off ratio, long retention time, good endurance, and distinguishable multi-level switching. To understand multi-level switching characteristics by adjusting the set voltages, we analyze the switching mechanism in each resistive state. This method represents a promising approach for high-performance non-volatile multi-level memory applications.


Author(s):  
Ratheesh K Vijayaraghavan ◽  
Biswajit K Barman ◽  
Manas Khatua ◽  
Bappaditya Goswami ◽  
Subhas Samanta

2012 ◽  
Vol 167 (3-4) ◽  
pp. 114-120
Author(s):  
A. Kozorezov ◽  
A. A. Golubov ◽  
D. D. E. Martin ◽  
P. A. J. de Korte ◽  
M. A. Lindeman ◽  
...  

1993 ◽  
Vol 213 (1-2) ◽  
pp. 193-199 ◽  
Author(s):  
A. Andronov ◽  
I. Gordion ◽  
V. Kurin ◽  
I. Nefedov ◽  
I. Shereshevsky

2013 ◽  
pp. 139-166
Author(s):  
Benedikt Lorenz Proffen ◽  
Martha M. Murray

2021 ◽  
Vol 17 (3) ◽  
pp. 51-57
Author(s):  
E.N. Soldatenkova

The article is devoted to the problem of the functional structure of communicative action. Based on theoretical analysis and many years of pedagogical experience of working with children with affective pathology (autism spectrum disorders), the author recreates and refines the studies of cultural-historical theory and answers its main question — a method problem: the influence of holistic interfunctional analysis on overcoming semantic bias (central defect and syndrome-forming factor of psychopathology) and the development of a more universal communication form — verbal communication in non-speaking children with autism spectrum disorders in preschool age (by means of restructuring the way the impaired function is realized). The described conditions can be taken into account when constructing an intermediary (lively communicative action) both in the practice of general education (to prevent the occurrence of motivational disorders and increase the age limit) and in working with children with affective pathology (especially with children with autism spectrum disorders).


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