THE ADVANCED ANALYSIS OF SLOW NON-STRETCHED EXPONENTIAL DECAY KINETICS FROM Si NANOCRYSTALS

Author(s):  
M. Greben ◽  
J. Valenta ◽  
P. Khoroshyy
2009 ◽  
Vol 404 (23-24) ◽  
pp. 5251-5254 ◽  
Author(s):  
J. Trzmiel ◽  
E. Placzek-Popko ◽  
A. Nowak ◽  
K. Weron ◽  
Z. Gumienny

1998 ◽  
Vol 105 (9) ◽  
pp. 571-575 ◽  
Author(s):  
K. Suzuki ◽  
G. Bley ◽  
U. Neukirch ◽  
J. Gutowski ◽  
N. Takojima ◽  
...  

1999 ◽  
Vol 166 (1-6) ◽  
pp. 189-198 ◽  
Author(s):  
Eugene G Novikov ◽  
Arie van Hoek ◽  
Antonie J.W.G Visser ◽  
Johannes W Hofstraat

2006 ◽  
Vol 432 (1-3) ◽  
pp. 371-374 ◽  
Author(s):  
Ophir Flomenbom ◽  
Johan Hofkens ◽  
Kelly Velonia ◽  
Frans C. de Schryver ◽  
Alan E. Rowan ◽  
...  

1994 ◽  
Vol 358 ◽  
Author(s):  
G. Mauckner ◽  
J. Hamann ◽  
W. Rebitzer ◽  
T. Baier ◽  
K. Thonke ◽  
...  

ABSTRACTThe photoluminescence (PL) infrared (IR)-band of p-doped porous Si (PS) films is studied by steady-state and time-resolved PL and by photoluminescence excitation (PLE) in detail. In analogy to the S-band in the visible the IR-band shifts to higher energies with reduced average nanocrystal size. The IR- and S-bands are very different in their decay behavior and in their recombination lifetimes. The temperature-dependent PL intensity shows non-exponential decay with lifetime distributions in the nsec-µsec range in contrast to the stretched exponential decay shape of the S-band corresponding to lifetime distributions in the μsec -msec range. The origin of the IR-band is likely related to radiative recombination at deep defects in Si nanocrystals with quantum-upshifted band gaps.


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