Origin of the Infrared Band From Porous Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
G. Mauckner ◽  
J. Hamann ◽  
W. Rebitzer ◽  
T. Baier ◽  
K. Thonke ◽  
...  
Keyword(s):  
Exponential Decay ◽  
Porous Si ◽  
Temperature Dependent ◽  
Infrared Band ◽  
Lifetime Distributions ◽  
Time Resolved ◽  
Si Nanocrystals ◽  
Recombination Lifetimes ◽  
Stretched Exponential Decay ◽  
Decay Behavior

ABSTRACTThe photoluminescence (PL) infrared (IR)-band of p-doped porous Si (PS) films is studied by steady-state and time-resolved PL and by photoluminescence excitation (PLE) in detail. In analogy to the S-band in the visible the IR-band shifts to higher energies with reduced average nanocrystal size. The IR- and S-bands are very different in their decay behavior and in their recombination lifetimes. The temperature-dependent PL intensity shows non-exponential decay with lifetime distributions in the nsec-µsec range in contrast to the stretched exponential decay shape of the S-band corresponding to lifetime distributions in the μsec -msec range. The origin of the IR-band is likely related to radiative recombination at deep defects in Si nanocrystals with quantum-upshifted band gaps.

PL and FTIR Absorption Study on Porous Silicon in Situ During Etching, in Oxygen Ambient, and After Chemical Oxidation

1992 ◽  
Vol 283 ◽  
Author(s):  
G. Mauckner ◽  
T. Walter ◽  
T. Baier ◽  
K. Thonke ◽  
R. Sauer Abteilung
Keyword(s):  
Defect Density ◽  
Chemical Oxidation ◽  
Laser Exposure ◽  
Porous Si ◽  
Radiative Recombination Rate ◽  
Time Resolved ◽  
Radiative Defect ◽  
Recombination Lifetimes ◽  
Time Resolved Photoluminescence

ABSTRACTSteady state and time-resolved photoluminescence (PL) and Fourier-transform infrared (FTIR) spectroscopy have been performed in situ during etching, on “as prepared” porous Si in air under laser exposure and on chemically oxidized porous Si. We suppose that PLdegradation of “as prepared” porous Si is caused by creating non-radiative defect centers during photooxidation. Chemically oxidized porous Si shows increased PL intensity and longer recombination lifetimes as compared to non-oxidized samples. We conclude, that an oxide layer with low defect density on the inner surface of chemically oxidized porous Si reduces the non-radiative recombination rate.

Temperature Dependent Kinetics of the OH/HO2/O3Chain Reaction by Time-Resolved IR Laser Absorption Spectroscopy

2000 ◽  
Vol 104 (17) ◽  
pp. 3964-3973 ◽  
Author(s):  
Sergey A. Nizkorodov ◽  
Warren W. Harper ◽  
Bradley W. Blackmon ◽  
David J. Nesbitt
Keyword(s):  
Absorption Spectroscopy ◽  
Laser Absorption Spectroscopy ◽  
Temperature Dependent ◽  
Time Resolved ◽  
Laser Absorption ◽  
Ir Laser ◽  
Kinetics Of

scholarly journals The thermal stability of FAPbBr3 nanocrystals from temperature-dependent photoluminescence and first-principles calculations

RSC Advances ◽  
2020 ◽  
Vol 10 (72) ◽  
pp. 44373-44381
Author(s):  
Xiaozhe Wang ◽  
Qi Wang ◽  
Zhijun Chai ◽  
Wenzhi Wu
Keyword(s):  
First Principles ◽  
First Principle ◽  
First Principles Calculations ◽  
Temperature Dependent ◽  
Time Resolved ◽  
First Principle Calculations ◽  
Steady State Time ◽  
Time Resolved Photoluminescence ◽  
Thermal Stability Of ◽  
Temperature Dependent Photoluminescence

The thermal properties of FAPbBr3 perovskite nanocrystals (PNCs) is investigated by use of temperature-dependent steady-state/time-resolved photoluminescence and first-principle calculations.

Stretched-exponential decay of the luminescence in ZnSeZnTe superlattices

1998 ◽  
Vol 105 (9) ◽  
pp. 571-575 ◽  
Author(s):  
K. Suzuki ◽  
G. Bley ◽  
U. Neukirch ◽  
J. Gutowski ◽  
N. Takojima ◽  
...  
Keyword(s):  
Exponential Decay ◽  
Stretched Exponential ◽  
Stretched Exponential Decay

Temperature dependent dielectric studies of Al/Dy2O3/porous Si heterostructure by capacitance and conductance measurements

2016 ◽  
Vol 685 ◽  
pp. 28-33 ◽  
Author(s):  
A. Cherif ◽  
S. Jomni ◽  
H. Saghrouni ◽  
W. Belgacem ◽  
K. Khirouni ◽  
...  
Keyword(s):  
Dielectric Studies ◽  
Porous Si ◽  
Temperature Dependent

Excited states of modified oxygen-deficient centers and Si quantum dots in Gd-implanted silica glasses: Emission dynamics and lifetime distributions

2021 ◽  
Author(s):  
Anatoly Zatsepin ◽  
Yulia Kuznetsova ◽  
Elena Trofimova ◽  
Vladimir A Pustovarov
Keyword(s):  
Quantum Dots ◽  
Ion Implantation ◽  
Excited States ◽  
Lifetime Distributions ◽  
Time Resolved ◽  
Silica Glasses ◽  
Pulsed Cathodoluminescence ◽  
Si Quantum Dots

The emission centers and excited states characteristics in silica glasses implanted with Gd ions were studied by time-resolved pulsed cathodoluminescence. It was found that in the process of ion implantation,...

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