GaAs/GaAlAs MULTIQUANTUM WELL ELECTROABSORPTION REFLECTION MODULATOR AND SELF ELECTRO-OPTIC EFFECT DEVICE (SEED)

1996 ◽  
Vol 07 (03) ◽  
pp. 399-407
Author(s):  
RONGHAN WU ◽  
WENZHI GAO ◽  
JUN ZHAO ◽  
ZHIBIAO CHEN ◽  
SHIMING LIN ◽  
...  
Keyword(s):  
Stark Effect ◽  
Optical Switch ◽  
Contrast Ratio ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Quantum Confined Stark Effect ◽  
Electro Optic ◽  
Fabry Perot ◽  
Fabrication And Characterization

GaAs/GaAlAs MQW reflection modulators and SEED have been investigated. The analysis is emphasized on the combined behaviors of quantum confined Stark effect (QCSE), distributed Bragg reflector (DBR), and different asymmetric Fabry–Perot cavities (ASFP). Experimental results include the fabrication and characterization of a modulator array with a contrast ratio of about 10 dB and S-SEED array with optical switch energy less than 10 fJ /(µ m )2. An application of a modulator array in microoptical interconnection module is also demonstrated.

scholarly journals Design, fabrication and characterization of a distributed Bragg reflector for reducing the étendue of a wavelength converting system

2020 ◽  
Vol 28 (9) ◽  
pp. 12837
Author(s):  
Boxuan Gao ◽  
John Puthenparampil George ◽  
Jeroen Beeckman ◽  
Kristiaan Neyts
Keyword(s):  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Fabrication And Characterization

Fabrication and characterization of GaN-based distributed Bragg reflector mirrors for low lasing threshold and integrated photonics

2005 ◽  
Vol 2 (7) ◽  
pp. 2895-2898 ◽  
Author(s):  
Teruhisa Kotani ◽  
Yoshitaka Hatada ◽  
Mitsuru Funato ◽  
Yukio Narukawa ◽  
Takashi Mukai ◽  
...  
Keyword(s):  
Bragg Reflector ◽  
Lasing Threshold ◽  
Integrated Photonics ◽  
Distributed Bragg Reflector ◽  
Fabrication And Characterization

Fabrication and characterization of microcavity organic light-emitting diode with CaF2/ZnS distributed Bragg reflector

2020 ◽  
Vol 699 ◽  
pp. 137912 ◽  
Author(s):  
Takuya Kitabayashi ◽  
Teruyuki Asashita ◽  
Naoya Satoh ◽  
Takayuki Kiba ◽  
Midori Kawamura ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light ◽  
Fabrication And Characterization

scholarly journals Growth and characterization of an epitaxially grown ZnSSe/MnZnSSe distributed Bragg reflector

1995 ◽  
Vol 67 (3) ◽  
pp. 407-409 ◽  
Author(s):  
A. Salokatve ◽  
K. Rakennus ◽  
P. Uusimaa ◽  
M. Pessa ◽  
T. Aherne ◽  
...  
Keyword(s):  
Bragg Reflector ◽  
Distributed Bragg Reflector

scholarly journals Theoretical Investigation of Near-Infrared Fabry–Pérot Microcavity Graphene/Silicon Schottky Photodetectors Based on Double Silicon on Insulator Substrates

Micromachines ◽  
2020 ◽  
Vol 11 (8) ◽  
pp. 708
Author(s):  
Maurizio Casalino
Keyword(s):  
Near Infrared ◽  
Incident Light ◽  
Resonant Cavity ◽  
Bragg Reflector ◽  
Silicon On Insulator ◽  
Noise Equivalent Power ◽  
Distributed Bragg Reflector ◽  
Absorption Mechanism ◽  
Output Mirror ◽  
Fabry Perot

In this work a new concept of silicon resonant cavity enhanced photodetector working at 1550 nm has been theoretically investigated. The absorption mechanism is based on the internal photoemission effect through a graphene/silicon Schottky junction incorporated into a silicon-based Fabry–Pérot optical microcavity whose input mirror is constituted by a double silicon-on-insulator substrate. As output mirror we have investigated two options: a distributed Bragg reflector constituted by some periods of silicon nitride/hydrogenated amorphous silicon and a metallic gold reflector. In addition, we have investigated and compared two configurations: one where the current is collected in the transverse direction with respect to the direction of the incident light, the other where it is collected in the longitudinal direction. We show that while the former configuration is characterized by a better responsivity, spectral selectivity and noise equivalent power, the latter configuration is superior in terms of bandwidth and responsivity × bandwidth product. Our results show responsivity of 0.24 A/W, bandwidth in GHz regime, noise equivalent power of 0.6 nW/cm√Hz and full with at half maximum of 8.5 nm. The whole structure has been designed to be compatible with silicon technology.

Simulation, Fabrication, and Characterization of a Sensitive SU-8-Based Fabry-Pérot MOEMS Accelerometer

2019 ◽  
Vol 37 (9) ◽  
pp. 1893-1902 ◽  
Author(s):  
Majid Taghavi ◽  
Hamid Latifi ◽  
Gholam Mohammad Parsanasab ◽  
Abolfazl Abedi ◽  
Hamed Nikbakht ◽  
...  
Keyword(s):  
Fabry Perot ◽  
Fabrication And Characterization
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