scholarly journals Theoretical Investigation of Near-Infrared Fabry–Pérot Microcavity Graphene/Silicon Schottky Photodetectors Based on Double Silicon on Insulator Substrates

Micromachines ◽  
2020 ◽  
Vol 11 (8) ◽  
pp. 708
Author(s):  
Maurizio Casalino
Keyword(s):  
Near Infrared ◽  
Incident Light ◽  
Resonant Cavity ◽  
Bragg Reflector ◽  
Silicon On Insulator ◽  
Noise Equivalent Power ◽  
Distributed Bragg Reflector ◽  
Absorption Mechanism ◽  
Output Mirror ◽  
Fabry Perot

In this work a new concept of silicon resonant cavity enhanced photodetector working at 1550 nm has been theoretically investigated. The absorption mechanism is based on the internal photoemission effect through a graphene/silicon Schottky junction incorporated into a silicon-based Fabry–Pérot optical microcavity whose input mirror is constituted by a double silicon-on-insulator substrate. As output mirror we have investigated two options: a distributed Bragg reflector constituted by some periods of silicon nitride/hydrogenated amorphous silicon and a metallic gold reflector. In addition, we have investigated and compared two configurations: one where the current is collected in the transverse direction with respect to the direction of the incident light, the other where it is collected in the longitudinal direction. We show that while the former configuration is characterized by a better responsivity, spectral selectivity and noise equivalent power, the latter configuration is superior in terms of bandwidth and responsivity × bandwidth product. Our results show responsivity of 0.24 A/W, bandwidth in GHz regime, noise equivalent power of 0.6 nW/cm√Hz and full with at half maximum of 8.5 nm. The whole structure has been designed to be compatible with silicon technology.

scholarly journals Demonstration of polarization control GaN-based micro-cavity lasers using a rigid high-contrast grating reflector

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Tsu-Chi Chang ◽  
Kuo-Bin Hong ◽  
Shuo-Yi Kuo ◽  
Tien-Chang Lu
Keyword(s):  
Semiconductor Lasers ◽  
Optical Pumping ◽  
Polarized Light ◽  
Transverse Magnetic ◽  
Bragg Reflector ◽  
Degree Of Polarization ◽  
High Contrast ◽  
Distributed Bragg Reflector ◽  
Output Mirror ◽  
High Contrast Grating

Abstract We reported on GaN microcavity (MC) lasers combined with one rigid TiO2 high-contrast grating (HCG) structure as the output mirror. The HCG structure was directly fabricated on the GaN structure without an airgap. The entire MC structure comprised a bottom dielectric distributed Bragg reflector; a GaN cavity; and a top HCG reflector, which was designed to yield high reflectance for transverse magnetic (TM)- or transverse electric (TE)-polarized light. The MC device revealed an operation threshold of approximately 0.79 MW/cm2 when pulsed optical pumping was conducted using the HCG structure at room temperature. The laser emission was TM polarized with a degree of polarization of 99.2% and had a small divergence angle of 14° (full width at half maximum). This laser operation demonstration for the GaN-based MC structure employing an HCG exhibited the advantages of HCGs in semiconductor lasers at wavelengths from green to ultraviolet.

scholarly journals III-Nitrides Resonant Cavity Photodetector Devices

Materials ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 4428
Author(s):  
Susana Fernández ◽  
Fernando B. Naranjo ◽  
Miguel Ángel Sánchez-García ◽  
Enrique Calleja
Keyword(s):  
Spectral Response ◽  
Optical Cavity ◽  
Resonant Cavity ◽  
Schottky Contact ◽  
Bragg Reflector ◽  
Planar Geometry ◽  
Distributed Bragg Reflector ◽  
Frequency Plasma ◽  
Wavelength Selectivity ◽  
Conventional Device

III-nitride resonant cavity-enhanced Schottky barrier photodetectors were fabricated on 2 µm thick GaN templates by radio frequency plasma-assisted molecular beam epitaxy. The optical cavity was formed by a bottom distributed Bragg reflector based on 10 periods of Al0.3Ga0.7N/GaN, an Au-based Schottky contact as top mirror, and an active zone of 40 nm-thick GaN layer. The devices were fabricated with planar geometry. To evaluate the main benefits allowed by the optical cavity, conventional Schottky photodetectors were also processed. The results revealed a planar spectral response for the conventional photodetector, unlike the resonant devices that showed two raised peaks at 330 and 358 nm with responsivities of 0.34 and 0.39 mA/W, respectively. Both values were 80 times higher than the planar response of the conventional device. These results demonstrate the strong effect of the optical cavity to achieve the desired wavelength selectivity and to enhance the optical field thanks to the light resonance into the optical cavity. The research of such a combination of nitride-based Bragg mirror and thin active layer is the kernel of the present paper.

Blue Resonant Cavity Light Emitting Diodes with a High-Al-Content GaN/AlGaN Distributed Bragg Reflector

2003 ◽  
Vol 42 (Part 2, No. 12B) ◽  
pp. L1509-L1511 ◽  
Author(s):  
Declan Byrne ◽  
Franck Natali ◽  
Benjamin Damilano ◽  
Amelie Dussaigne ◽  
Nicolas Grandjean ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Resonant Cavity ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Light Emitting ◽  
Al Content ◽  
High Al Content

scholarly journals Designing multilayer dielectric filter based on TiO2/SiO2 for fluorescence microscopy applications

2020 ◽  
Vol 44 (2) ◽  
pp. 209-213 ◽  
Author(s):  
Hanh Hong Mai
Keyword(s):  
Fluorescence Microscopy ◽  
Near Infrared ◽  
Narrow Band ◽  
Synthesis Method ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Construction Design ◽  
Needle Technique ◽  
Spectral Performance ◽  
New Construction

This study presents a new construction design of a distributed Bragg reflector (DBR) filter and a Fabry–Pérot (FP) filter by using needle technique as a synthesis method. The optimized DBR and FP filters having a proper number of layers with controlling thickness TiO2/SiO2 are utilized to transmit only a certain narrow band of wavelengths while blocking the others. As a proof of concept, the filters are designed to selectively transmit only a very narrow band of wavelength at 780 nm which is the near infrared (NIR) fluorescent emission from Alexa Fluor 750 dye. The obtained results show that the optimized filters represent advanced spectral performance which can be used to improve the sensitivity and the imaging contrast in fluorescence microscopy.

GaAs/GaAlAs MULTIQUANTUM WELL ELECTROABSORPTION REFLECTION MODULATOR AND SELF ELECTRO-OPTIC EFFECT DEVICE (SEED)

1996 ◽  
Vol 07 (03) ◽  
pp. 399-407
Author(s):  
RONGHAN WU ◽  
WENZHI GAO ◽  
JUN ZHAO ◽  
ZHIBIAO CHEN ◽  
SHIMING LIN ◽  
...  
Keyword(s):  
Stark Effect ◽  
Optical Switch ◽  
Contrast Ratio ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Quantum Confined Stark Effect ◽  
Electro Optic ◽  
Fabry Perot ◽  
Fabrication And Characterization

GaAs/GaAlAs MQW reflection modulators and SEED have been investigated. The analysis is emphasized on the combined behaviors of quantum confined Stark effect (QCSE), distributed Bragg reflector (DBR), and different asymmetric Fabry–Perot cavities (ASFP). Experimental results include the fabrication and characterization of a modulator array with a contrast ratio of about 10 dB and S-SEED array with optical switch energy less than 10 fJ /(µ m )2. An application of a modulator array in microoptical interconnection module is also demonstrated.

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