INCLINED SUBSTRATE DEPOSITED CeO2 FILMS BY ELECTRON BEAM EVAPORATION ON RANDOMLY ORIENTED METALLIC SUBSTRATE
A study on CeO 2 film growth on randomly oriented metallic substrate using lnclined Substrate Deposition (ISD) technique was performed in order to develop a biaxially aligned buffer layer for YBa 2 Cu 3 O 7-δ (YBCO) coated conductors. The influence of deposition parameters, as the substrate inclination angle α with respect to the CeO 2 vapor direction, deposition temperature and film thickness, on structural and morphological properties of the film was investigated. At substrate temperature between 200°C and 700°C a biaxial texture was observed for α ranging from 15° to 75°. The minimum value of the ϕ-scan full width at half maximum (FWHM) on (002) poles of about 13.5° was obtained for film 2 μm thick deposited at 200°C and α=55°. Morphological analyses on cross-sectioned samples revealed a columnar structure, typical for this deposition technique, with spaced grains and a tile like surface.