INCLINED SUBSTRATE DEPOSITED CeO2 FILMS BY ELECTRON BEAM EVAPORATION ON RANDOMLY ORIENTED METALLIC SUBSTRATE

2003 ◽  
Vol 17 (04n06) ◽  
pp. 886-892 ◽  
Author(s):  
A. MANCINI ◽  
G. CELENTANO ◽  
F. FABBRI ◽  
V. GALLUZZI ◽  
T. PETRISOR ◽  
...  

A study on CeO 2 film growth on randomly oriented metallic substrate using lnclined Substrate Deposition (ISD) technique was performed in order to develop a biaxially aligned buffer layer for YBa 2 Cu 3 O 7-δ (YBCO) coated conductors. The influence of deposition parameters, as the substrate inclination angle α with respect to the CeO 2 vapor direction, deposition temperature and film thickness, on structural and morphological properties of the film was investigated. At substrate temperature between 200°C and 700°C a biaxial texture was observed for α ranging from 15° to 75°. The minimum value of the ϕ-scan full width at half maximum (FWHM) on (002) poles of about 13.5° was obtained for film 2 μm thick deposited at 200°C and α=55°. Morphological analyses on cross-sectioned samples revealed a columnar structure, typical for this deposition technique, with spaced grains and a tile like surface.

2000 ◽  
Vol 14 (25n27) ◽  
pp. 3128-3133
Author(s):  
A. MANCINI ◽  
V. BOFFA ◽  
G. CELENTANO ◽  
L. CIONTEA ◽  
M. DAMASCENI ◽  
...  

Y 2 O 3 and MgO-based buffer layer architectures on non-magnetic cube textured Ni-V substrates were studied for YBa 2 Cu 3 O 7-δ (YBCO) coated conductors fabrication using both pulsed laser deposition and electron beam evaporation. The Y 2 O 3 films exhibited a biaxial texture with φ and ω-scans full width at half maximum (FWHM) of about 11° and 7° and a smooth and continuous surface. YBCO thick films deposited on CeO 2/ Y 2 O 3/ Ni-V and CeO 2/ Y 2 O 3/ NiO/Ni-V architectures were mainly c-axis oriented showing a T C(R=0) above 85 K. MgO films were grown by electron beam evaporation both directly on metallic substrates and with a Pd intermediate layer. The MgO films grown on Ni-V substrates show a good texture and good surface morphological properties. The MgO deposition on Pd buffered Ni-V substrate leads to films with better structural properties with respect to MgO deposition on bare Ni-V substrate, showing φ and ω-scans FWHM up to 8° and 5°, respectively. In spite of the interdiffusion between Pd buffer layer and Ni-V substrate, the MgO films preserve their structural and morphological properties when annealed at typical YBCO deposition temperature.


2006 ◽  
Vol 19 (11) ◽  
pp. 1200-1208 ◽  
Author(s):  
L Molina ◽  
K Knoth ◽  
S Engel ◽  
B Holzapfel ◽  
O Eibl

2002 ◽  
Vol 372-376 ◽  
pp. 790-793 ◽  
Author(s):  
G. Celentano ◽  
V. Boffa ◽  
L. Ciontea ◽  
F. Fabbri ◽  
V. Galluzzi ◽  
...  

2008 ◽  
Vol 97 ◽  
pp. 012108 ◽  
Author(s):  
L Molina ◽  
S Engel ◽  
K Knoth ◽  
R Hühne ◽  
B Holzapfel ◽  
...  

Author(s):  
J. E. O'Neal ◽  
J. J. Bellina ◽  
B. B. Rath

Thin films of the bcc metals vanadium, niobium and tantalum were epitaxially grown on (0001) and sapphire substrates. Prior to deposition, the mechanical polishing damage on the substrates was removed by an in-situ etch. The metal films were deposited by electron-beam evaporation in ultra-high vacuum. The substrates were heated by thermal contact with an electron-bombarded backing plate. The deposition parameters are summarized in Table 1.The films were replicated and examined by electron microscopy and their crystallographic orientation and texture were determined by reflection electron diffraction. Verneuil-grown and Czochralskigrown sapphire substrates of both orientations were employed for each evaporation. The orientation of the metal deposit was not affected by either increasing the density of sub-grain boundaries by about a factor of ten or decreasing the deposition rate by a factor of two. The results on growth epitaxy are summarized in Tables 2 and 3.


2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-109-Pr11-113
Author(s):  
U. Schmatz ◽  
Ch. Hoffmann ◽  
M. Bauer ◽  
R. Metzger ◽  
P. Berberich ◽  
...  

2014 ◽  
Vol 507 (2) ◽  
pp. 022048 ◽  
Author(s):  
A Vannozzi ◽  
F Fabbri ◽  
A Augieri ◽  
A Angrisani Armenio ◽  
V Galluzzi ◽  
...  

2009 ◽  
Vol 23 (1) ◽  
pp. 014024 ◽  
Author(s):  
W Schmidt ◽  
B Gamble ◽  
H-P Kraemer ◽  
D Madura ◽  
A Otto ◽  
...  

2016 ◽  
Vol 26 (4) ◽  
pp. 1-4 ◽  
Author(s):  
Yunpeng Zhu ◽  
Liyuan Liu ◽  
Gang Wang ◽  
Xinsheng Yang ◽  
Yong Zhao

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