Modeling the curvature and interface shear stress of GaN-sapphire system
Keyword(s):
The curvature and interface shear stress of GaN-sapphire system are studied by establishing the mechanical equations based on two main assumptions: (a) the thickness of GaN film can be compared to the thickness of sapphire substrate, and (b) the thickness of GaN film is non-uniform. Our results show that the curvature of GaN-sapphire system is a variable within the whole circular system. The interface shear stress changes direction around at the middle of radius for the circular system, and the curvature have an important effect on the interface shear stress due to the consideration of non-uniform thickness for GaN film.
2012 ◽
Vol 446-449
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pp. 3499-3502
2001 ◽
Vol 5
(1)
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pp. 35-43
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2013 ◽
Vol 20
(6)
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pp. 993-1005
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2011 ◽
Vol 71-78
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pp. 1348-1353
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Keyword(s):