GLOBAL EXISTENCE AND ASYMPTOTIC BEHAVIOR FOR A SEMICONDUCTOR DRIFT-DIFFUSION-POISSON MODEL
2008 ◽
Vol 18
(03)
◽
pp. 443-487
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Keyword(s):
In this paper a time-dependent as well as a stationary drift-diffusion-Poisson system for semiconductors are studied. Global existence and uniqueness of weak solution of the time-dependent problem are proven and we also prove the existence and uniqueness of the steady state. It is shown that as time tends to infinity, the solution of the time-dependent problem will converge to a unique equilibrium. Due to the presence of recombination-generation rate R in our drift-diffusion-Poisson model, the work of this paper in some sense extends the results in the previous literature (on both time-dependent problem and stationary problem).
2017 ◽
Vol 47
(7)
◽
pp. 2365-2394
2004 ◽
Vol 39
(1)
◽
pp. 1-12
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2015 ◽
Vol 39
(11)
◽
pp. 3116-3135
◽
2006 ◽
pp. 269-281
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