Atomic Structure of Si(100) Surfaces
1998 ◽
Vol 05
(01)
◽
pp. 1-4
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Keyword(s):
The structure of a clean Si(100) and a Ni-contaminated si(100) was investigated using scanning tunneling microscopy. The clean Si (100) shows the 2 × 1 reconstruction with a surface dimer vacancy density less than 2%. The major defects on the clean surface are a single dimer vacancy and the C defect. A small amount of Ni on the surface drastically changes the surface structure and produces 2 × n reconstructions. The formation of vacancy clusters is favored. A rebonded SB step is preferred on the clean Si(100) while a nonrebonded SB step with a split-off dimer is mainly observed on the Ni-contaminated Si(100) and in the vicinity of dimer vacancies of the lower terrace on the clean Si(100).
1988 ◽
Vol 60
(18)
◽
pp. 1856-1859
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Keyword(s):
1991 ◽
Vol 9
(2)
◽
pp. 1009
◽
Keyword(s):
2003 ◽
Vol 216
(1-4)
◽
pp. 54-58
◽
Keyword(s):