Temperature studies using positron lifetime spectroscopy of the subsurface zone in pure titanium exposed to a dry sliding test

The report presents the positron annihilation studies of subsurface zone generated in pure titanium exposed to a long period dry sliding test. The total depth of the subsurface zone induced is detected at about 250 µm. Only dislocations and vacancy clusters which consist of two or three vacancies are observed in this zone. Their concentration decreases with the depth, especially at the depth above 100 µm. Despite the long duration of the sliding test, no clear signs indicating the presence of a tribolayer were observed. This was confirmed also by observation of annealing of defects in this zone at different depths. The lack of the tribolayer is in contrast to the research done so far for other metals.

Effects of He-D Interaction on Irradiation-Induced Swelling in Fe9Cr Alloys

The atomic-scale defects such as (deuterium, helium)-vacancy clusters in nuclear energy materials are one of the causes for the deterioration of the macroscopic properties of materials. Unfortunately, they cannot be observed by transmission electron microscopy (TEM) before they grow to the nanometer scale. Positron annihilation spectroscopy (PAS) has been proven to be sensitive to open-volume defects, and could characterize the evolution of the size and concentration of the vacancy-like nanoclusters. We have investigated the effects of He-D interaction on the formation of nanoscale cavities in Fe9Cr alloys by PAS and TEM. The results show that small-sized bubbles are formed in the specimen irradiated with 5 × 1016 He+/cm2, and the subsequent implanted D-ions contribute to the growth of these helium bubbles. The most likely reason is that helium bubbles previously formed in the sample captured deuterium injected later, causing bubbles to grow. In the lower dose He-irradiated samples, a large number of small dislocations and vacancies are generated and form helium-vacancy clusters with the helium atoms.

Gradient Microstructure Induced by Surface Mechanical Attrition Treatment in Grade 2 Titanium Studied Using Positron Annihilation Spectroscopy and Complementary Methods

Microstructural changes in grade 2 titanium generated by surface mechanical attrition treatment (SMAT) were studied using positron annihilation lifetime spectroscopy and complementary methods. A significant increase in the mean positron lifetime indicated many lattice defects introduced by SMAT. Two positron lifetime components were resolved in the positron lifetime spectra measured. The longer lifetime revealed the presence of vacancy clusters containing about 3 or 4 vacancies, while the shorter one was attributed to the annihilation of positrons trapped at dislocations. The changes of the positron lifetime indicated a decreasing dislocation density and the presence of a deeper layer with a higher concentration of vacancy clusters at the distance from the treated surface for which the microhardness approached the value for the strain-free matrix. Electrochemical impedance spectroscopy showed the positive effect of SMAT on the corrosion resistance of the titanium studied in a saline environment also after removal of the original oxide layer that was formed during the SMAT.

Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam

A process for activating Mg and its relationship with vacancy-type defects in Mg-implanted GaN were studied by positron annihilation spectroscopy. Mg+ ions were implanted with an energy of 10 keV, and the Mg concentration in the subsurface region (≤ 50 nm) was on the order of 1019 cm−3. After the Mg-implantation, N+ ions were implanted to provide a 300-nm-deep box profile with a N concentration of 6 × 1018 cm−3. From capacitance–voltage measurements, the sequential implantation of N was found to enhance the activation of Mg. For N-implanted GaN before annealing, the major defect species were determined to Ga-vacancy related defects such as divacancy. After annealing below 1000 °C, the clustering of vacancies was observed. Above 1200 °C annealing, however, the size of the vacancies started to decrease, which was due to recombinations of vacancy clusters and excess N atoms in the damaged region. The suppression of vacancy clustering by sequential N-implantation in Mg-implanted GaN was attributed to the origin of the enhancement of the Mg activation.