HIGH-FREQUENCY NOISE IN PSEUDOMORPHIC DOUBLE-HETEROJUNCTION HIGH ELECTRON MOBILITY TRANSISTORS

2002 ◽  
Vol 02 (01) ◽  
pp. L13-L19 ◽  
Author(s):  
S. LONG ◽  
L. ESCOTTE ◽  
J. GRAFFEUIL ◽  
P. FELLON ◽  
D. GEIGER ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Noise Figure ◽  
Field Effect Transistors ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
Frequency Noise ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Double Heterojunction

The noise behavior of pseudomorphic double-heterojunction high electron mobility transistors dedicated to power applications is investigated in this paper and compared to conventional low noise field effect transistors. The noise is analyzed from an extrinsic and an intrinsic point of view. It appears that the minimum noise figure is similar for the two devices even if the intrinsic noise sources are different. We explain this phenomenon using the double-heterojunction mode of operation.

scholarly journals Large-Signal Linearity and High-Frequency Noise of Passivated AlGaN/GaN High-Electron Mobility Transistors

Micromachines ◽  
2020 ◽  
Vol 12 (1) ◽  
pp. 7
Author(s):  
Yu-Shyan Lin ◽  
Shin-Fu Lin
Keyword(s):  
Electron Mobility ◽  
High Frequency ◽  
Noise Figure ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Large Signal ◽  
High Electron Mobility ◽  
High Frequency Noise ◽  
Electron Mobility Transistors

This study proposes AlGaN/GaN/silicon high-electron mobility transistors (HEMTs) grown by a metallorganic chemical vapor deposition (MOCVD) system. The large-signal linearity and high-frequency noise of HEMTs without and with different passivation layers are compared. The experimental data show that the addition of a TiO2 passivation layer to undoped AlGaN/GaN HEMT’s increases the value of the third-order intercept point (OIP3) by up to 70% at 2.4 GHz. Furthermore, the minimum noise figure (NFmin) of the HEMT with TiO2 passivation is significantly reduced.

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals Pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors with Super Low Noise Performances of 0.41 dB at 18 GHz

ETRI Journal ◽  
1996 ◽  
Vol 18 (3) ◽  
pp. 171-179 ◽  
Author(s):  
Jin-Hee Lee Lee ◽  
Hyung-Sup Yoon Yoon ◽  
Byung-Sun Park Park ◽  
Chul Soon Park Park ◽  
Sang-Soo Choi Choi ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Millimeter-wave low-noise high electron mobility transistors

1985 ◽  
Vol 6 (10) ◽  
pp. 531-533 ◽  
Author(s):  
P.C. Chao ◽  
S.C. Palmateer ◽  
P.M. Smith ◽  
U.K. Mishra ◽  
K.H.G. Duh ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals Excess low-frequency noise in AlGaN/GaN-based high-electron-mobility transistors

2002 ◽  
Vol 80 (12) ◽  
pp. 2126-2128 ◽  
Author(s):  
S. A. Vitusevich ◽  
S. V. Danylyuk ◽  
N. Klein ◽  
M. V. Petrychuk ◽  
V. N. Sokolov ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

scholarly journals On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field

AIP Advances ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 085004 ◽  
Author(s):  
Isabel Harrysson Rodrigues ◽  
David Niepce ◽  
Arsalan Pourkabirian ◽  
Giuseppe Moschetti ◽  
Joel Schleeh ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Angular Dependence ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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