Investigations on electrical parameters degradation and recovery of E-mode GaN high-electron mobility transistors under repetitive unclamped inductive switching stresses based on low-frequency noise
2014 ◽
2016 ◽
Vol 55
(5)
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pp. 056502
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2001 ◽
2009 ◽
Vol 2009
(01)
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pp. P01038
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