ELECTRICAL PROPERTIES OF THE PULSED-LASER DEPOSITED SURFACE-BARRIER STRUCTURES BASED ON p-Si
2012 ◽
Vol 15
◽
pp. 152-156
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Surface-barrier structures based on p - Si where fabricated by pulsed-laser deposition method. Electrical properties (current-voltage and capacitance-voltage) of these structures were studied. It is shown, that the forward current ((+) on p - Si ) varies as a J = J 0 exp ( eU / nkT ) and surface-barrier structures based on high-resistivity p - Si are light-sensitive.
2011 ◽
Vol 94
(6)
◽
pp. 1675-1678
◽
Keyword(s):
2012 ◽
Vol 47
(3)
◽
pp. 137-141
Keyword(s):
2021 ◽
Vol 1095
(1)
◽
pp. 012009
Keyword(s):
Keyword(s):