Current Transport Mechanism of Hydrogenated Amorphous Silicon Schottky Barrier Diodes

1981 ◽  
Vol 20 (3) ◽  
pp. 593-596 ◽  
Author(s):  
Yasuyoshi Mishima ◽  
Masataka Hirose ◽  
Yukio Osaka
1983 ◽  
Vol 54 (12) ◽  
pp. 7025-7033 ◽  
Author(s):  
H. L. Fernandez‐Canque ◽  
J. Allison ◽  
M. J. Thompson

1997 ◽  
Vol 467 ◽  
Author(s):  
Indra Nurdjaja ◽  
E. A. Schiff

ABSTRACTWe present measurements of the photocapacitance in hydrogenated amorphous silicon (a-Si:H) Schottky barrier diodes under reverse bias. A calculation relating photocapacitance to hole drift mobility measurements is also presented; the calculation incorporates the prominent dispersion effect for holes in a-Si:H usually attributed to valence bandtail trapping. The calculation accounts quantitatively for the magnitude and voltage-dependence of the photocapacitance.


Solar Cells ◽  
1980 ◽  
Vol 1 (4) ◽  
pp. 371-379 ◽  
Author(s):  
D.E. Carlson ◽  
C.W. Magee ◽  
J.H. Thomas

2010 ◽  
Vol 97 (14) ◽  
pp. 143509 ◽  
Author(s):  
Kurtis D. Cantley ◽  
Anand Subramaniam ◽  
Ramapriyan R. Pratiwadi ◽  
Herman Carlo Floresca ◽  
Jinguo Wang ◽  
...  

2014 ◽  
Vol 54 (1) ◽  
pp. 011001 ◽  
Author(s):  
Yao Yao ◽  
Jian Zhong ◽  
Yue Zheng ◽  
Fan Yang ◽  
Yiqiang Ni ◽  
...  

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