Photocapacitance and Hole Drift Mobility Measurements in Hydrogenated Amorphous Silicon (a-Si:H)

1997 ◽  
Vol 467 ◽  
Author(s):  
Indra Nurdjaja ◽  
E. A. Schiff
Keyword(s):  
Amorphous Silicon ◽  
Schottky Barrier ◽  
Reverse Bias ◽  
Voltage Dependence ◽  
Hydrogenated Amorphous Silicon ◽  
Drift Mobility ◽  
Schottky Barrier Diodes ◽  
Dispersion Effect ◽  
Hydrogenated Amorphous

ABSTRACTWe present measurements of the photocapacitance in hydrogenated amorphous silicon (a-Si:H) Schottky barrier diodes under reverse bias. A calculation relating photocapacitance to hole drift mobility measurements is also presented; the calculation incorporates the prominent dispersion effect for holes in a-Si:H usually attributed to valence bandtail trapping. The calculation accounts quantitatively for the magnitude and voltage-dependence of the photocapacitance.

The capacitance of rf sputtered hydrogenated amorphous silicon, Schottky barrier diodes

1983 ◽  
Vol 54 (12) ◽  
pp. 7025-7033 ◽  
Author(s):  
H. L. Fernandez‐Canque ◽  
J. Allison ◽  
M. J. Thompson
Keyword(s):  
Amorphous Silicon ◽  
Schottky Barrier ◽  
Hydrogenated Amorphous Silicon ◽  
Schottky Barrier Diodes ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon films in palladium Schottky barrier cells

Solar Cells ◽  
1980 ◽  
Vol 1 (4) ◽  
pp. 371-379 ◽  
Author(s):  
D.E. Carlson ◽  
C.W. Magee ◽  
J.H. Thomas
Keyword(s):  
Amorphous Silicon ◽  
Schottky Barrier ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Hydrogenated Amorphous

Investigation of the Causes and Variation of Leakage Currents in Amorphous Silicon P-I-N Diodes

2003 ◽  
Vol 762 ◽  
Author(s):  
Todd R. Johnson ◽  
Gautam Ganguly ◽  
George S. Wood ◽  
David E. Carlson
Keyword(s):  
Zinc Oxide ◽  
Amorphous Silicon ◽  
Point Defects ◽  
Tin Oxide ◽  
Reverse Bias ◽  
Hydrogenated Amorphous Silicon ◽  
Cell Area ◽  
Leakage Currents ◽  
Single Junction ◽  
Hydrogenated Amorphous

AbstractExcess leakage currents under reverse bias (known as shunting) and spontaneous reductions of this excess leakage under increased reverse bias (known as curing) were investigated in hydrogenated amorphous silicon (a-Si:H) based single junction p-i-n type diodes. An increase in the frequency of shunting was observed when the front contacts were switched from tin oxide to zinc oxide, most likely due to defects in the previously deposited zinc oxide coated glass was observed. Storage in the dark and light soaking up to 100 hours were both observed to independently increase the leakage current in previously leaking diodes. Models for the distribution of shunt-causing defects within a given cell area were considered. Comparing the measured frequency of shunting using cells of varying area (1 to 16 mm2) to the models' predictions indicate a distribution of point defects separated by relatively large average distances that are slightly larger for tin oxide (5-6 mm) than for zinc oxide (4 mm).

Hydrogenated amorphous silicon nanowire transistors with Schottky barrier source/drain junctions

2010 ◽  
Vol 97 (14) ◽  
pp. 143509 ◽  
Author(s):  
Kurtis D. Cantley ◽  
Anand Subramaniam ◽  
Ramapriyan R. Pratiwadi ◽  
Herman Carlo Floresca ◽  
Jinguo Wang ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Schottky Barrier ◽  
Silicon Nanowire ◽  
Hydrogenated Amorphous Silicon ◽  
Nanowire Transistors ◽  
Hydrogenated Amorphous
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