Photo-Induced Current Transient Spectroscopy in High-Resistivity Bulk Material. I. Computer Controlled Multi-Channel PICTS System with High-Resolution

Osamu Yoshie; Mitsuo Kamihara

doi:10.1143/jjap.22.621

Photo-Induced Current Transient Spectroscopy in High-Resistivity Bulk Material. I. Computer Controlled Multi-Channel PICTS System with High-Resolution

Japanese Journal of Applied Physics ◽

10.1143/jjap.22.621 ◽

1983 ◽

Vol 22 (Part 1, No. 4) ◽

pp. 621-628 ◽

Cited By ~ 77

Author(s):

Osamu Yoshie ◽

Mitsuo Kamihara

Keyword(s):

High Resolution ◽

Bulk Material ◽

Current Transient ◽

High Resistivity ◽

Induced Current ◽

Computer Controlled ◽

Transient Spectroscopy

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Photo-Induced Current Transient Spectroscopy in High-Resistivity Bulk Material. II. Influence of Non-Exponential Transient on Determination of Deep Trap Parameters

Japanese Journal of Applied Physics ◽

10.1143/jjap.22.629 ◽

1983 ◽

Vol 22 (Part 1, No. 4) ◽

pp. 629-635 ◽

Cited By ~ 28

Author(s):

Osamu Yoshie ◽

Mitsuo Kamihara

Keyword(s):

Bulk Material ◽

Deep Trap ◽

Current Transient ◽

High Resistivity ◽

Induced Current ◽

Transient Spectroscopy

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Photo-Induced Current Transient Spectroscopy in High-Resistivity Bulk Material. III. Scanning-PICTS System for Imaging Spatial Distributions of Deep-Traps in Semi-Insulating GaAs Wafer

Japanese Journal of Applied Physics ◽

10.1143/jjap.24.431 ◽

1985 ◽

Vol 24 (Part 1, No. 4) ◽

pp. 431-440 ◽

Cited By ~ 20

Author(s):

Osamu Yoshie ◽

Mitsuo Kamihara

Keyword(s):

Bulk Material ◽

Current Transient ◽

High Resistivity ◽

Spatial Distributions ◽

Induced Current ◽

Gaas Wafer ◽

Deep Traps ◽

Transient Spectroscopy

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Investigation of deep levels in high-resistivity bulk materials by photo-induced current transient spectroscopy. I. Review and analysis of some basic problems

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/19/1/011 ◽

1986 ◽

Vol 19 (1) ◽

pp. 57-70 ◽

Cited By ~ 85

Author(s):

J C Balland ◽

J P Zielinger ◽

C Noguet ◽

M Tapiero

Keyword(s):

Deep Levels ◽

Current Transient ◽

High Resistivity ◽

Induced Current ◽

Bulk Materials ◽

Transient Spectroscopy

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Photo-induced current transient spectroscopy for high-resistivity neutron-transmutation-doped silicon

Semiconductor Science and Technology ◽

10.1088/0268-1242/2/5/001 ◽

1987 ◽

Vol 2 (5) ◽

pp. 251-254 ◽

Cited By ~ 6

Author(s):

Y Tokuda ◽

A Usami ◽

Y Inoue

Keyword(s):

Current Transient ◽

High Resistivity ◽

Induced Current ◽

Doped Silicon ◽

Neutron Transmutation ◽

Transient Spectroscopy

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On deep levels in high-resistivity LEC-GaAs investigated by means of photo induced current transient spectroscopy

Proceedings of Semiconducting and Semi-Insulating Materials Conference ◽

10.1109/sim.1996.570927 ◽

2002 ◽

Author(s):

D. Seghier ◽

H.P. Gislason

Keyword(s):

Deep Levels ◽

Current Transient ◽

High Resistivity ◽

Induced Current ◽

Lec Gaas ◽

Transient Spectroscopy

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Investigation of deep levels in high-resistivity bulk materials by photo-induced current transient spectroscopy. II. Evaluation of various signal processing methods

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/19/1/012 ◽

1986 ◽

Vol 19 (1) ◽

pp. 71-87 ◽

Cited By ~ 56

Author(s):

J C Balland ◽

J P Zielinger ◽

M Tapiero ◽

J G Gross ◽

C Noguet

Keyword(s):

Signal Processing ◽

Deep Levels ◽

Current Transient ◽

High Resistivity ◽

Induced Current ◽

Bulk Materials ◽

Processing Methods ◽

Transient Spectroscopy ◽

Signal Processing Methods

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Photoinduced current transient spectroscopy of high-resistivity layered GaSe crystals

Semiconductors ◽

10.1134/s1063782610070031 ◽

2010 ◽

Vol 44 (7) ◽

pp. 854-856 ◽

Cited By ~ 3

Author(s):

A. P. Odrinsky

Keyword(s):

Current Transient ◽

High Resistivity ◽

Transient Spectroscopy

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Photo-Induced Current Transient Spectroscopy of Semi-insulating Single Crystal Cs2Hg6S7

Journal of Electronic Materials ◽

10.1007/s11664-014-3372-2 ◽

2014 ◽

Vol 44 (1) ◽

pp. 222-226 ◽

Cited By ~ 2

Author(s):

Z. Liu ◽

J.A. Peters ◽

H. Li ◽

M. G. Kanatzidis ◽

J. Im ◽

...

Keyword(s):

Single Crystal ◽

Current Transient ◽

Induced Current ◽

Transient Spectroscopy

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Characterization of SIMOX-MOS transistors by photo-induced current transient spectroscopy

Semiconductor Science and Technology ◽

10.1088/0268-1242/6/9/018 ◽

1991 ◽

Vol 6 (9) ◽

pp. 937-939 ◽

Cited By ~ 2

Author(s):

G Papaioannou ◽

B Ioannou-Sougleridis ◽

S Cristoloveanu

Keyword(s):

Current Transient ◽

Induced Current ◽

Mos Transistors ◽

Transient Spectroscopy

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Defect characterization of unannealed neutron transmutation doped silicon by means of deep temperature microwave detected photo induced current transient spectroscopy

Journal of Applied Physics ◽

10.1063/1.5134663 ◽

2020 ◽

Vol 127 (3) ◽

pp. 035704 ◽

Cited By ~ 1

Author(s):

C. R. Engst ◽

I. Eisele ◽

C. Kutter

Keyword(s):

Current Transient ◽

Defect Characterization ◽

Induced Current ◽

Doped Silicon ◽

Neutron Transmutation ◽

Transient Spectroscopy ◽

Deep Temperature

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