High Power GaInAsP/InP Strained Quantum Well Superluminescent Diode with Tapered Active Region

1999 ◽  
Vol 38 (Part 1, No. 9A) ◽  
pp. 5121-5122 ◽  
Author(s):  
Takeshi Yamatoya ◽  
Shota Mori ◽  
Fumio Koyama ◽  
Kenichi Iga
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
High Power ◽  
Superluminescent Diode ◽  
Strained Quantum Well

30-mW 690-nm high-power strained-quantum-well AlGaInP laser

1993 ◽  
Vol 29 (6) ◽  
pp. 1851-1856 ◽  
Author(s):  
Y. Ueno ◽  
H. Fujii ◽  
H. Sawano ◽  
K. Kobayashi ◽  
K. Hara ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
Strained Quantum Well

Superluminescent Diode at 0.8-µm with a GaAsP/AlGaAs Tensile-Strained Quantum Well

2018 ◽  
Author(s):  
Shuai Zhou ◽  
Zu-Rong Tang ◽  
Shang-Jun Liu ◽  
Yong Zhou ◽  
Jing Zhang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Superluminescent Diode ◽  
Strained Quantum Well
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