Numerical Model for Oxygen Incorporation into AlGaAs Layer Grown by Molecular Beam Epitaxy

2003 ◽  
Vol 42 (Part 2, No.9A/B) ◽  
pp. L1041-L1043 ◽  
Author(s):  
Shigeya Naritsuka ◽  
Osamu Kobayashi ◽  
Takahiro Maruyama
Keyword(s):  
Numerical Model ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Oxygen Incorporation ◽  
Algaas Layer

New Technique for Suppressing Oxygen Impurity in AlGaAs Layer during Molecular Beam Epitaxy by Surface Segregation

2005 ◽  
Vol 44 (4A) ◽  
pp. 1669-1672 ◽  
Author(s):  
Shigeya Naritsuka ◽  
Osamu Kobayashi ◽  
Kazuhiro Mitsuda ◽  
Tatau Nishinaga
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
New Technique ◽  
Oxygen Impurity ◽  
Algaas Layer

scholarly journals Oxygen Incorporation in ZnTeO Alloys via Molecular Beam Epitaxy

2014 ◽  
Vol 43 (4) ◽  
pp. 889-893 ◽  
Author(s):  
Li Qin Zhou ◽  
Chihyu Chen ◽  
Hongfei Jia ◽  
Chen Ling ◽  
Debasish Banerjee ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Oxygen Incorporation

Oxygen incorporation mechanism in AlGaAs layers grown by molecular beam epitaxy

2003 ◽  
Vol 254 (3-4) ◽  
pp. 310-315 ◽  
Author(s):  
S. Naritsuka ◽  
O. Kobayashi ◽  
K. Mitsuda ◽  
T. Nishinaga
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Oxygen Incorporation

Influence of oxygen incorporation on beryllium‐doped InGaAs grown by molecular beam epitaxy

1987 ◽  
Vol 51 (20) ◽  
pp. 1597-1599 ◽  
Author(s):  
A. Le Corre ◽  
J. Caulet ◽  
M. Gauneau ◽  
S. Loualiche ◽  
H. L’Haridon ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Oxygen Incorporation
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