The effect of oxygen incorporation on interfacial recombination in GaInP/AlGaInP double heterostructures grown by molecular beam epitaxy using a solid phosphorus valved cell

ABSTRACTWe investigated AlAs0.56Sb0.44 epitaxial layers lattice-matched to InP grown by molecular beam epitaxy (MBE). Silicon (Si) and tellurium (Te) were studied as n-type dopants in AlAs0.56Sb0.44 material. Similar to most Sb-based materials, AlAs0.56Sb0.44 demonstrates a maximum active carrier concentration around low-1018 cm-3 when using Te as a dopant. We propose the use of a heavily Si-doped InAlAs layer embedded in the AlAsSb barrier as a modulation-doped layer. The In0.53Ga0.47As/AlAs0.56Sb0.44 double heterostructures with a 10 nm InGaAs well show an electron mobility of about 9400 cm2/V・s at 295 K and 32000 cm2/V・s at 46 K. A thinner 5 nm InGaAs well has an electron mobility of about 4300 cm2/V・s at 295 K. This study demonstrates that AlAs0.56Sb0.44 is a promising barrier material for highly scaled InGaAs MOSFETs and HEMTs.

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Evidence of interface-induced persistent photoconductivity in InP∕In0.53Ga0.47As∕InP double heterostructures grown by molecular-beam epitaxy

Applied Physics Letters ◽

10.1063/1.1994948 ◽

2005 ◽

Vol 87 (3) ◽

pp. 032106 ◽

Cited By ~ 1

Author(s):

M. K. Hudait ◽

Y. Lin ◽

S. H. Goss ◽

P. Smith ◽

S. Bradley ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Persistent Photoconductivity ◽

Double Heterostructures

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Effect of Oxygen Pressure on Magnesium Oxide Dielectrics Grown on Gan by Plasma Assisted Gas Source Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-743-l3.60 ◽

2002 ◽

Vol 743 ◽

Author(s):

A. H. Onstine ◽

B. P. Gila ◽

J. Kim ◽

D. Stodilka ◽

K. Allums ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Oxygen Pressure ◽

Molecular Beam ◽

Breakdown Field ◽

Rf Plasma ◽

Bulk Single Crystal ◽

Electrical Characteristics ◽

Ecr Plasma ◽

Gas Source ◽

Effect Of Oxygen

ABSTRACTThe effect of oxygen pressure on MgO grown by RF plasma assisted gas-source molecular beam epitaxy was investigated. Increasing oxygen pressure was found to decrease the growth rate, improve the morphology and reduce the Mg/O ratio to near that obtained from bulk single crystal MgO. By contrast, the electrical characteristics of MgO/GaN diodes showed continual improvement in breakdown field and interface state density as the pressure was decreased. The lowest pressure tested, 1×10−5Torr, produced the lowest Dit, 3×1011 eV−1cm−2, and the highest VBD, 4.4 MV/cm. Cross sectional transmission electron microscopy of the MgO grown at the lowest pressure showed the initial 40 monolayers to be epitaxial, with the remainder of the layer appearing to be fine grained poly-crystal. Comparisons with films grown using an electron cyclotron resonance (ECR) plasma suggest that higher ion energies are desirable for obtaining the best electrical characteristics.

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Formation of High-Quality Si/CoSi2/Si Double Hetero-Structures by Self-Aligned and Two-Step Molecular Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-160-275 ◽

1989 ◽

Vol 160 ◽

Author(s):

Masanobu Miyao ◽

Takashi Ohshima ◽

Nobuo Nakamura ◽

Kiyokazu Nakagawa

Keyword(s):

High Temperature ◽

Molecular Beam Epitaxy ◽

High Performance ◽

Molecular Beam ◽

High Quality ◽

Cross Sectional ◽

New Techniques ◽

Transmission Microscopy ◽

Temperature Growth ◽

Double Heterostructures

AbstractThe formation and application of Si/CoSi2/Si double heterostructures are comprehensively studied. A high-quality double heterostructure is formed by two-step molecular beam epitaxy of the Si over layer, i.e., low -temperature growth followed by high-temperature growth. The interfaces between CoSi2 and Si observed by cross-sectional transmission microscopy are atomically abrupt and smooth. In addition, a new fine patterning method of CoSi2 films using self-aligned and selective growth is developed. Finally, permeable base transistors (PBT) with high performance (gm=50 mS /mm) are fabricated using these new techniques.

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