Control of Semiconductor Interfaces
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EXAFS Study for the 1ML InP1-xAsx Layers on InP(001)

1994 ◽  
pp. 543-547
Author(s):  
Y. Kuwahara ◽  
R. Shioda ◽  
H. Oyanagi ◽  
Y. Takeda ◽  
K. Haga ◽  
...  
Keyword(s):  
Exafs Study

Open-tube diffusion in GaAs using zinc- and tin-doped spin-on silica films

1994 ◽  
pp. 525-530
Author(s):  
K. Okamoto ◽  
A. Yamada ◽  
Y. Shimogaki ◽  
Y. Nakano ◽  
K. Tada
Keyword(s):  
Silica Films ◽  
Open Tube

Zinc diffusion into InGaAsP materials using dimethylzinc by open tube technique

1994 ◽  
pp. 519-524
Author(s):  
T. Tsuchiya ◽  
T. Taniwatari ◽  
M. Komori ◽  
T. Kawano ◽  
K. Saitoo
Keyword(s):  
Open Tube ◽  
Zinc Diffusion

Atomic incorporation difference between arsenic into GaSb and antimony into GaAs

1994 ◽  
pp. 483-488
Author(s):  
Tomohiro Shibata ◽  
Yasushi Nanishi ◽  
Masatomo Fujimoto

FT-IR-RAS ANALYSIS OF THE STRUCTURE OF THE SiO2/Si INTERFACE

1994 ◽  
pp. 447-452
Author(s):  
Kenji Ishikawa ◽  
Hiroki Ogawa ◽  
Carlos Inomata ◽  
Shuzo Fujimura ◽  
Haruhisa Mori
Keyword(s):  
Ft Ir
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