Effect of Composition Disorders on Band Structure and Optical Gain Spectra of GaInNAs/GaAs Quantum Wells

2009 ◽  
Vol 48 (8) ◽  
pp. 081101
Author(s):  
Vivek Dixit ◽  
Hongfei Liu ◽  
Ning Xiang
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Optical Gain ◽  
Gain Spectra

Band structure and optical gain in InGaAsN∕GaAs and InGaAsN∕GaAsN quantum wells

2003 ◽  
Vol 150 (1) ◽  
pp. 25 ◽  
Author(s):  
X. Marie ◽  
J. Barrau ◽  
T. Amand ◽  
H. Carrère ◽  
A. Arnoult ◽  
...  
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Optical Gain

Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser

2007 ◽  
Vol 31 ◽  
pp. 95-97
Author(s):  
B. Dong ◽  
W.J. Fan ◽  
Y.X. Dang
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Optical Gain ◽  
Band Structures ◽  
Quantum Well Laser ◽  
Suitable Combination ◽  
Gain Spectra ◽  
Strained Quantum Well

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.

Optical Gain Spectra in InGaN/GaN Quantum Wells with the Compositional Fluctuations

1998 ◽  
Vol 537 ◽  
Author(s):  
Takeshi Uenoyama
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optical Gain ◽  
Inhomogeneous Broadening ◽  
Localized States ◽  
Quantum Well Structures ◽  
Potential Fluctuation ◽  
Quantum Disk ◽  
Gain Spectra

The compositional fluctuations of the In content were found in InGaN/GaN quantum wells and it caused the localized states by the potential fluctuation. We have evaluated the optical gain of GaN based quantum well structures with localized states. The localized states are treated as the subband states of the quantum disk-like dots in the well. It was found that the inhomogeneous broadening played an important role in the optical gain and that it should be reduced to use the benefit of the localized states for laser oscillations.

Band structure and optical gain in GaInAsN quantum wells

2003 ◽  
Vol 17 ◽  
pp. 245-246 ◽  
Author(s):  
H. Carrère ◽  
A. Arnoult ◽  
X. Marie ◽  
T. Amand ◽  
E. Bedel-Pereira ◽  
...  
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Optical Gain

The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells

2009 ◽  
Vol 41 (9) ◽  
pp. 1656-1660 ◽  
Author(s):  
Shudong Wu ◽  
Zhi Huang ◽  
Yuan Liu ◽  
Qiufeng Huang ◽  
Wang Guo ◽  
...  
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Valence Band ◽  
Optical Gain ◽  
Valence Band Structure

scholarly journals Valence hole subbands and optical gain spectra of GaN/Ga1−xAlxN strained quantum wells

1996 ◽  
Vol 80 (6) ◽  
pp. 3471-3478 ◽  
Author(s):  
W. J. Fan ◽  
M. F. Li ◽  
T. C. Chong ◽  
J. B. Xia
Keyword(s):  
Quantum Wells ◽  
Optical Gain ◽  
Strained Quantum Wells ◽  
Gain Spectra

Valence Band Structure and Optical Gain in CdxZn1-xS/ZnS Quantum Wells

2002 ◽  
Vol 41 (Part 1, No. 7A) ◽  
pp. 4517-4518
Author(s):  
Chikara Onodera ◽  
Tadayoshi Shoji ◽  
Yukio Hiratate ◽  
Tsunemasa Taguchi
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Valence Band ◽  
Optical Gain ◽  
Valence Band Structure

Band structure and optical gain of InGaAsN/GaAsP/GaAs strained quantum wells

2005 ◽  
Vol 2 (8) ◽  
pp. 3023-3026
Author(s):  
H. Carrère ◽  
X. Marie ◽  
J. Barrau ◽  
T. Amand
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
Optical Gain ◽  
Strained Quantum Wells
Sign in / Sign up

Export Citation Format

Share Document