Valence band structure and charge distribution in the layered lanthanide-doped CuCr0.99Ln0.01S2 (Ln = La, Ce) solid solutions

The comprehensive study of the electronic density distribution of CuCr0.99Ln0.01S2 (Ln = La, Ce) solid solutions was carried out using both X-ray photoelectron and emission spectroscopy. It was found that cationic substitution of chromium with lanthanum or cerium atoms does not significantly affect the atomic charges of the matrix elements (Cu, Cr, S) in the lanthanide-doped solid solutions. The copper atoms in the composition of CuCrS2-matrix and the lanthanide-doped solid solutions were found to be in the monovalent state. The chromium and lanthanide atoms were found to be in the trivalent state. This fact indicates the isovalent cationic substitution character. The sulfur atoms were found to be in the divalent state. The near-surface layers contain the additional oxidation forms of sulfur (S0, S4+, S6+) and copper (Cu2+) atoms. The detailed analysis of the valence band structure using DFT calculations has shown that partial DOS distribution character of the matrix elements is preserved after the cationic substitution. The experimental valence band spectra structure of CuCrS2-matrix and CuCr0.99Ln0.01S2 is determined by the occupied copper d-states contribution. The contribution of the lanthanide states in the valence band structure is lower in comparison with those for the matrix elements. The major contribution of the lanthanide states was found to be mainly localized near the conduction band bottom.

Carbon supported Pd–Cu nanoalloys: support and valence band structure influence on reduction and oxidation reactions

The present study has tracked the changes in the electronic and structural properties of Pd–Cu nanoalloys that were influenced by the composition and chosen support.

A polarization-induced 2D hole gas in undoped gallium nitride quantum wells

A high-conductivity two-dimensional (2D) hole gas, analogous to the ubiquitous 2D electron gas, is desirable in nitride semiconductors for wide-bandgap p-channel transistors. We report the observation of a polarization-induced high-density 2D hole gas in epitaxially grown gallium nitride on aluminium nitride and show that such hole gases can form without acceptor dopants. The measured high 2D hole gas densities of about 5 × 1013 per square centimeters remain unchanged down to cryogenic temperatures and allow some of the lowest p-type sheet resistances among all wide-bandgap semiconductors. The observed results provide a probe for studying the valence band structure and transport properties of wide-bandgap nitride interfaces.

A laminar MAPbBr3/MAPbBr3−xIx graded heterojunction single crystal for enhancing charge extraction and optoelectronic performance

A laminar MAPbBr3/MAPbBr3−xIx graded heterojunction single crystal forms a graded valence band structure, resulting in enhanced hole extraction as well as superior photodetection performance.