Voltage Switching Limits of Lateral GaN Power Devices

ECS Transactions ◽

10.1149/05804.0179ecst ◽

2013 ◽

Vol 58 (4) ◽

pp. 179-184 ◽

Author(s):

K. Shenai

Keyword(s):

Power Devices ◽

Voltage Switching

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Reliability aspects of GaN based power devices for high voltage switching applications

2012 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/iirw.2012.6468959 ◽

2012 ◽

Author(s):

Joachim Wurfl

Keyword(s):

High Voltage ◽

Power Devices ◽

Voltage Switching

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Voltage Switching Limits of Lateral GaN Power Devices

ECS Meeting Abstracts ◽

10.1149/ma2013-02/25/1914 ◽

2013 ◽

Keyword(s):

Power Devices ◽

Voltage Switching

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Fast High Voltage Switching With SiC Power Devices

ECS Meeting Abstracts ◽

10.1149/ma2012-02/30/2521 ◽

2012 ◽

Keyword(s):

High Voltage ◽

Power Devices ◽

Voltage Switching

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Possibility of Reducing The On-resistance in 1 kV-class Lateral Superjunction Power Devices based on III-V Semiconductors

IEEJ Transactions on Electronics Information and Systems ◽

10.1541/ieejeiss.139.1015 ◽

2019 ◽

Vol 139 (9) ◽

pp. 1015-1019

Author(s):

Tomoyoshi Kushida ◽

Hiroyuki Sakaki

Keyword(s):

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International Standardization on Superconducting Power Devices

The Journal of the Institute of Electrical Engineers of Japan ◽

10.1541/ieejjournal.134.558 ◽

2014 ◽

Vol 134 (8) ◽

pp. 558-559

Author(s):

Koki TSUNODA ◽

Teruo MATSUSHITA

Keyword(s):

Power Devices ◽

International Standardization

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High-Frequency SiC-Based Medium Voltage Quasi-2-Level Flying Capacitor DC/DC Converter With Zero Voltage Switching

2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe) ◽

10.23919/epe20ecceeurope43536.2020.9215950 ◽

2020 ◽

Author(s):

Rafal Kopacz ◽

Przemyslaw Trochimiuk ◽

Grzegorz Wrona ◽

Jacek Rabkowski

Keyword(s):

High Frequency ◽

Zero Voltage Switching ◽

Medium Voltage ◽

Zero Voltage ◽

Voltage Switching

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Semiconductor devices � Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices

10.3403/30366380 ◽

2019 ◽

Keyword(s):

Silicon Carbide ◽

Semiconductor Devices ◽

Power Devices ◽

Non Destructive

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Semiconductor devices � Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices

10.3403/30351626 ◽

2019 ◽

Keyword(s):

Silicon Carbide ◽

Semiconductor Devices ◽

Power Devices ◽

Non Destructive

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Semiconductor devices � Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices

10.3403/30382425u ◽

2020 ◽

Keyword(s):

Silicon Carbide ◽

Semiconductor Devices ◽

Power Devices ◽

Non Destructive

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Defect engineering in SiC technology for high-voltage power devices

Applied Physics Express ◽

10.35848/1882-0786/abc787 ◽

2020 ◽

Vol 13 (12) ◽

pp. 120101

Author(s):

Tsunenobu Kimoto ◽

Heiji Watanabe

Keyword(s):

High Voltage ◽

Defect Engineering ◽

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