Atmospheric Pressure Selective Epitaxial Growth of Heavily in-situ Phosphorous-Doped Si(:C) Raised Sources and Drains
2008 ◽
Vol 310
(21)
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pp. 4507-4510
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Keyword(s):
2016 ◽
Vol 6
(1)
◽
pp. P52-P57
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2008 ◽
Vol 40
(6-7)
◽
pp. 984-987
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Keyword(s):