Characterization of Ge1-x-ySixSny Ternary Alloys – Comparison of UHV-CVD and Gas Source MBE Growth

2014 ◽  
Keyword(s):  
Ternary Alloys ◽  
Mbe Growth ◽  
Gas Source ◽  
Gas Source Mbe

Characterization of Ge1-x-ySixSny Ternary Alloys - Comparison of UHV-CVD and Gas Source MBE Growth

2014 ◽  
Vol 64 (6) ◽  
pp. 801-810 ◽  
Author(s):  
B. Claflin ◽  
A. Kiefer ◽  
R. Beeler ◽  
Z.- Q. Fang ◽  
G. Grzybowski
Keyword(s):  
Ternary Alloys ◽  
Mbe Growth ◽  
Gas Source ◽  
Gas Source Mbe

Gas source MBE growth and characterization of TlInGaP and TlInGaAs layers for long wavelength applications

1999 ◽  
Vol 201-202 ◽  
pp. 1069-1072 ◽  
Author(s):  
H. Asahi ◽  
H. Koh ◽  
K. Takenaka ◽  
K. Asami ◽  
K. Oe ◽  
...  
Keyword(s):  
Mbe Growth ◽  
Long Wavelength ◽  
Gas Source ◽  
Gas Source Mbe

Gas source MBE growth of GaN rich side of GaN1 − xPx using ion-removed ECR radical cell

1997 ◽  
Vol 175-176 ◽  
pp. 150-155 ◽  
Author(s):  
K. Iwata ◽  
H. Asahi ◽  
K. Asami ◽  
S. Gonda
Keyword(s):  
Mbe Growth ◽  
Gas Source ◽  
Gas Source Mbe ◽  
Rich Side

Gas source MBE growth of InP under in-rich conditions

2005 ◽  
Author(s):  
Tsuen-Lin Lee ◽  
Jin-Shang Liu ◽  
Hao-Hsiung Lin
Keyword(s):  
Mbe Growth ◽  
Gas Source ◽  
Gas Source Mbe

Gas-source MBE growth of freestanding Si nano-wires on Au/Si substrate

1999 ◽  
Vol 25 (1-2) ◽  
pp. 477-479 ◽  
Author(s):  
J.L. Liu ◽  
S.J. Cai ◽  
G.L. Jin ◽  
Y.S. Tang ◽  
K.L. Wang
Keyword(s):  
Si Substrate ◽  
Mbe Growth ◽  
Gas Source ◽  
Nano Wires ◽  
Gas Source Mbe

New semiconductors TlInGaP and their gas source MBE growth

1997 ◽  
Vol 175-176 ◽  
pp. 1195-1199 ◽  
Author(s):  
H. Asahi ◽  
M. Fushida ◽  
K. Yamamoto ◽  
K. Iwata ◽  
H. Koh ◽  
...  
Keyword(s):  
Mbe Growth ◽  
Gas Source ◽  
Gas Source Mbe
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