scholarly journals An Analytical Study on the Local Electronic Density of States of the Valence Bands in Amorphous Silicon Carbide

1998 ◽  
Vol 21 (3) ◽  
pp. 217-219 ◽  
Author(s):  
M. A. Grado-Caffaro ◽  
M. Grado-Caffaro

A formulation for the energy-averaged local valence band density of states of amorphous silicon carbide is derived. To this end,sp3-type hybrid orbitals are employed.

1986 ◽  
Vol 33 (4) ◽  
pp. 2370-2379 ◽  
Author(s):  
H. Winter ◽  
P. J. Durham ◽  
W. M. Temmerman ◽  
G. M. Stocks

1994 ◽  
Vol 336 ◽  
Author(s):  
S.C. Deane ◽  
M.J. Powell

ABSTRACTWe derive the hydrogen density of states for hydrogenated Amorphous silicon (a-Si:H), which is completely consistent with the electronic density of states for the defect pool model. If silicon dangling bond energies are distributed in energy, as in a defect pool model, then the hydrogen density of states becomes quite complex, with the hydrogen binding energy dependent on the Fermi level and dangling bond transition energy. We demonstrate that the electronic density of states for dangling bonds is almost identical to our previous defect pool model, while the hydrogen density of states can account for the results of hydrogenation-dehydrogenation experiments. The effective hydrogen correlation energy is variable, being negative for most hydrogen binding sites, but positive for most defect sites.


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